component
DOS9P03
Public Made by Adomby adom
DOINGTER MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownDOS9P03
DOINGTER · MOSFETs · SOP-8
DOS9P03 from DOINGTER, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET (pins 1-3 are source); VDS rating -30V. |
| 2 | S | passive | Source of the P-channel MOSFET (pins 1-3 are source); VDS rating -30V. |
| 3 | S | passive | Source of the P-channel MOSFET (pins 1-3 are source); VDS rating -30V. |
| 4 | G | input | Gate of the P-channel MOSFET (pin 4); VGS maximum ±20V, threshold -1 to -2.5V. |
| 5 | D | passive | Drain of the P-channel MOSFET (pins 5-8 are drain); continuous current -9A at TC=25℃. |
| 6 | D | passive | Drain of the P-channel MOSFET (pins 5-8 are drain); continuous current -9A at TC=25℃. |
| 7 | D | passive | Drain of the P-channel MOSFET (pins 5-8 are drain); continuous current -9A at TC=25℃. |
| 8 | D | passive | Drain of the P-channel MOSFET (pins 5-8 are drain); continuous current -9A at TC=25℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | DOINGTER |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -9 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | -6 | A | TC=100℃ | 1 | ||
| Drain Current-Pulsed | IDM | -36 | A | 1 | |||
| Power Dissipation | PD | 3.1 | W | 1 | |||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 40 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V,ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VGS=0V, VDS=-30V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0A | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | -1 | -1.5 | -2.5 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source On Resistance | RDS(ON) | 19 | 25 | mΩ | VGS=-10V,ID=-10A | 2 | |
| Drain-Source On Resistance | RDS(ON) | 27 | 40 | mΩ | VGS=-4.5V,ID=-5A | 2 | |
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V,IS=-12A | 2 |
CAD (KiCad official)
- Symbol:
DOS9P03 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
dos9p03-etched.step/dos9p03-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dos9p03.step/dos9p03.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: DOINGTER datasheet (5 pp, sha256
56aadd04a8a01509, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).