component
WM02P30M
Public Made by Adomby adom
Wayon MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownWM02P30M
Wayon · MOSFETs · SOT-23
WM02P30M from Wayon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±12 V, with threshold VGS(th) of -0.4 to -1 V at ID = -250 µA. |
| 2 | S | passive | Source of the P-channel MOSFET; continuous source current is -3 A and body diode VSD is at most -1.2 V at IS = -1 A. |
| 3 | D | passive | Drain; drain-source voltage is -20 V max, continuous drain current is -3 A, and pulsed drain current is -10 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wayon |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | -3 | A | TA = 25°C | 1 | ||
| Pulsed Drain Current | IDM | -10 | A | Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C | 1 | ||
| Power Dissipation | PD | 1 | W | TA = 25°C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ ,TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance from Junction to Ambient | RθJA | 125 | °C/W | Surface mounted on 1 inch2 FR-4 board with 2OZ copper (note 2) | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | -20 | V | VGS= 0V, ID= -250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS= -20V, VGS= 0V | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS= 0V, VGS= ±12V | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | -0.4 | -1 | V | VDS= VGS, ID= -250μA | 2 | |
| Drain-Source on-State Resistance | RDS(on) | 50 | 70 | mΩ | VGS= -4.5V, ID= -3.0A | 2 | |
| Drain-Source on-State Resistance | RDS(on) | 60 | 90 | mΩ | VGS= -2.5V, ID= -2.0A | 2 | |
| Body Diode Voltage | VSD | -1.2 | V | IS= -1A, VGS= 0V | 2 | ||
| Continuous Source Current | IS | -3 | A | 2 |
CAD (KiCad official)
- Symbol:
WM02P30M - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
wm02p30m-etched.step/wm02p30m-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wm02p30m.step/wm02p30m.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wayon datasheet (5 pp, sha256
8909b7e7882f2a8e, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).