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SI4925DDY-T1-GE3-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI4925DDY-T1-GE3-HXY
HXY MOSFET · MOSFETs · SOP-8
SI4925DDY-T1-GE3-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of P-channel MOSFET 1; the device is rated for a drain-source voltage of -30 V and continuous drain current of -8.5 A. |
| 2 | G1 | input | Gate of P-channel MOSFET 1; gate-source voltage is rated ±20 V. |
| 3 | S2 | passive | Source of P-channel MOSFET 2; the device is rated for a drain-source voltage of -30 V and continuous drain current of -8.5 A. |
| 4 | G2 | input | Gate of P-channel MOSFET 2; gate-source voltage is rated ±20 V. |
| 5 | D2 | passive | Drain of P-channel MOSFET 2; pulsed drain current is rated -26 A. |
| 6 | D2 | passive | Drain of P-channel MOSFET 2; pulsed drain current is rated -26 A. |
| 7 | D1 | passive | Drain of P-channel MOSFET 1; pulsed drain current is rated -26 A. |
| 8 | D1 | passive | Drain of P-channel MOSFET 1; pulsed drain current is rated -26 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | TA=25°C unless otherwise noted | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA=25°C unless otherwise noted | 1 | |
| Drain Current-Continuous | ID | -8.5 | A | TA=25°C unless otherwise noted | 1 | ||
| Drain Current-Pulsed (Note 1) | IDM | -26 | A | TA=25°C unless otherwise noted | 1 | ||
| Maximum Power Dissipation | PD | 1.5 | W | TA=25°C unless otherwise noted | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient (Note 2) | RθJA | 85 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 18 | mΩ | VGS=-10V, ID=-6A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 28 | mΩ | VGS=-4.5V, ID=-4A | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -2.5 | V | VGS=VDS, ID=-250uA | 2 | |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-24V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | -5 | uA | VDS=-24V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | -6.5 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | -26 | A | 2 | |||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 | ||
| BVDSS Temperature Coefficient | △BVDSS/△TJ | -0.022 | V/℃ | Reference to 25℃, ID=-1mA | 2 | ||
| VGS(th) Temperature Coefficient | △VGS(th) | 4.6 | mV/℃ | 2 | |||
| Forward Transconductance | gfs | 17 | S | VDS=-5V, ID=-6A | 2 | ||
| Gate Resistance | Rg | 13 | VDS=0V, VGS=0V, f=1MHz | 2 | |||
| Total Gate Charge (-4.5V) | Qg | 12.6 | nC | VDS=-15V, VGS=-4.5V, ID=-6A | 2 | ||
| Gate-Source Charge | Qgs | 4.8 | nC | VDS=-15V, VGS=-4.5V, ID=-6A | 2 | ||
| Gate-Drain Charge | Qgd | 4.8 | nC | VDS=-15V, VGS=-4.5V, ID=-6A | 2 | ||
| Turn-On Delay Time | Td(on) | 4.6 | ns | VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-6A | 2 | ||
| Rise Time | Tr | 14.8 | ns | VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-6A | 2 | ||
| Turn-Off Delay Time | Td(off) | 41 | ns | VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-6A | 2 | ||
| Fall Time | Tf | 19.6 | ns | VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-6A | 2 | ||
| Input Capacitance | Ciss | 1345 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 194 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 158 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | ||
| Reverse Recovery Time | trr | 16.3 | nS | IF=-6A, dI/dt=100A/µs, TJ=25℃ | 2 | ||
| Reverse Recovery Charge | Qrr | 5.9 | nC | IF=-6A, dI/dt=100A/µs, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
SI4925DDY-T1-GE3-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
si4925ddy-t1-ge3-hxy-etched.step/si4925ddy-t1-ge3-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si4925ddy-t1-ge3-hxy.step/si4925ddy-t1-ge3-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
6c587712202af582, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).