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HT8620ARZ

Public Made by Adom

by adom

HTCSEMI Instrumentation Amplifiers, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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HT8620ARZ

HTCSEMI · Instrumentation Amplifiers · SOP-8

HT8620ARZ from HTCSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 RG passive One of two gain-set terminals, where a single external resistor between pins 1 and 8 sets G = 1 + (49.4 kΩ/RG), RG is left unconnected for G = 1, and RG should have a TC below 10 ppm/°C.
2 -IN input Inverting input with 400 Ω of series thin film resistance that safely withstands overloads up to ±15 V or ±60 mA for several hours, and for longer periods the current should not exceed 6 mA.
3 +IN input Non-inverting input with 400 Ω of series thin film resistance that safely withstands overloads up to ±15 V or ±60 mA for several hours, and for longer periods the current should not exceed 6 mA.
4 -VS power_in Negative supply pin, with an operating supply range of ±2.3 V to ±18 V.
5 REF input Reference terminal that defines the zero output voltage, with an allowable offset range of 2 V within the supply voltages, and parasitic resistance should be kept to a minimum for optimum CMR.
6 OUTPUT output Single-ended output referred to the REF pin potential, with a short-circuit current of ±18 mA and an output swing of −VS + 1.2 V to +VS − 1.4 V at RL = 10 kΩ for ±5 V to ±18 V supplies.
7 +VS power_in Positive supply pin, with an operating supply range of ±2.3 V to ±18 V.
8 RG passive Second gain-set terminal, which together with pin 1 takes the single external gain resistor RG, left unconnected for G = 1, with RG TC below 10 ppm/°C.

Key specifications

Parameter Value
Manufacturer HTCSEMI
Package SOP-8
Category Amplifiers/Comparators
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gain Error 0.03 0.1 % VOUT = ±10 V; G = 1 2
Gain Error 0.15 0.3 % VOUT = ±10 V; G = 10 2
Gain Error 0.4 0.7 % VOUT = ±10 V; G = 1000 2
Gain Range 1 10000 2
Nonlinearity 10 40 ppm VOUT = −10 V to +10 V; G = 1-1000; RL = 10 kΩ 2
Nonlinearity 10 95 ppm VOUT = −10 V to +10 V; G = 1-100; RL = 2 kΩ 2
Input Offset Voltage VOSI 30 125 µV VS = ±5 V to ±15 V 2
Input Offset Voltage, overtemperature 185 µV Overtemperature; VS = ±5 V to ±15 V 2
Input Offset Voltage Average TC 0.3 1 µV/°C VS = ±5 V to ±15 V 2
Output Offset Voltage VOSO 400 1000 µV VS = ±15 V 2
Output Offset Voltage VOSO 1500 µV VS = ±5 V 2
Output Offset Voltage, overtemperature 2000 µV Overtemperature; VS = ±5 V to ±15 V 2
Output Offset Voltage Average TC 5 15 µV/°C VS = ±5 V to ±15 V 2
Offset Referred to Input vs. Supply (PSR) 80 100 dB VS = ±2.3 V to ±18 V; G = 1 2
Offset Referred to Input vs. Supply (PSR) 95 120 dB VS = ±2.3 V to ±18 V; G = 10 2
Offset Referred to Input vs. Supply (PSR) 110 140 dB VS = ±2.3 V to ±18 V; G = 100 2
Input Bias Current 0.5 2 nA 2
Input Bias Current, overtemperature 2.5 nA Overtemperature 2
Input Bias Current Average TC 3 pA/°C 2
Input Offset Current 0.3 1 nA 2
Input Offset Current, overtemperature 1.5 nA Overtemperature 2
Input Offset Current Average TC 1.5 pA/°C 2
Gain vs. Temperature 10 ppm/°C G = 1 2
Gain vs. Temperature -50 ppm/°C G > 12 2
Common-Mode Rejection Ratio 73 90 dB DC to 60 Hz with 1 kΩ source imbalance; VCM = 0 V to ±10 V; G = 1 3
Common-Mode Rejection Ratio 93 110 dB DC to 60 Hz with 1 kΩ source imbalance; VCM = 0 V to ±10 V; G = 10 3
Common-Mode Rejection Ratio 110 130 dB DC to 60 Hz with 1 kΩ source imbalance; VCM = 0 V to ±10 V; G = 100 3
Short Circuit Current -18 18 mA 3
Small Signal −3 dB Bandwidth 1000 kHz G = 1 3
Small Signal −3 dB Bandwidth 800 kHz G = 10 3
Small Signal −3 dB Bandwidth 120 kHz G = 100 3
Small Signal −3 dB Bandwidth 12 kHz G = 1000 3
Slew Rate 0.75 1.2 V/µs 3
Settling Time to 0.01% 15 µs 10 V step; G = 1-100 3
Settling Time to 0.01% 150 µs 10 V step; G = 1000 3
Input Voltage Noise eni 9 13 nV/√Hz 1 kHz 3
Output Voltage Noise eno 72 100 nV/√Hz 1 kHz 3
RTI Voltage Noise, 0.1 Hz to 10 Hz 3 µV p-p 0.1 Hz to 10 Hz; G = 1 3
RTI Voltage Noise, 0.1 Hz to 10 Hz 0.55 µV p-p 0.1 Hz to 10 Hz; G = 10 3
RTI Voltage Noise, 0.1 Hz to 10 Hz 0.28 µV p-p 0.1 Hz to 10 Hz; G = 100-1000 3
Current Noise 100 fA/√Hz f = 1 kHz 3
Current Noise 10 pA p-p 0.1 Hz to 10 Hz 3
Reference Input Resistance RIN 20 kΩ 3
Reference Input Current IIN 50 60 µA VIN+, VREF = 0 3
Gain to Output -0.0001 1 0.0001 3
Operating Range 2.3 18 V Supply ±VS, ±2.3 V to ±18 V (as printed ±2.3 and ±18) 3
Quiescent Current 0.9 1.3 mA VS = ±2.3 V to ±18 V 3
Quiescent Current, overtemperature 1.1 1.6 mA Overtemperature; VS = ±2.3 V to ±18 V 3
Temperature Range, for specified performance -40 85 °C For specified performance (HT8620A/B grade) 3

CAD (KiCad official)

  • Symbol: HT8620ARZ
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: ht8620arz-etched.step / ht8620arz-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ht8620arz.step / ht8620arz.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HTCSEMI datasheet (19 pp, sha256 ecb0f3decc0d6a18, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF