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FDS6670A

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UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

FDS6670A

UMW · MOSFETs · SOP-8

FDS6670A from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive SOURCE terminal of the 30 V N-channel MOSFET; the datasheet gives no pin-specific limit for this pin, and pins 1, 2 and 3 are all tied to source.
2 S passive SOURCE terminal of the 30 V N-channel MOSFET; the datasheet gives no pin-specific limit for this pin, and pins 1, 2 and 3 are all tied to source.
3 S passive SOURCE terminal of the 30 V N-channel MOSFET; the datasheet gives no pin-specific limit for this pin, and pins 1, 2 and 3 are all tied to source.
4 G input GATE terminal of the MOSFET; the gate-source voltage is rated at ±20 V (VGSS) per the absolute maximum ratings.
5 D passive DRAIN terminal of the MOSFET; the device is rated for 30 V drain-source (VDSS) and 13 A continuous drain current, and pins 5 through 8 are all tied to drain.
6 D passive DRAIN terminal of the MOSFET; the device is rated for 30 V drain-source (VDSS) and 13 A continuous drain current, and pins 5 through 8 are all tied to drain.
7 D passive DRAIN terminal of the MOSFET; the device is rated for 30 V drain-source (VDSS) and 13 A continuous drain current, and pins 5 through 8 are all tied to drain.
8 D passive DRAIN terminal of the MOSFET; the device is rated for 30 V drain-source (VDSS) and 13 A continuous drain current, and pins 5 through 8 are all tied to drain.

Key specifications

Parameter Value
Manufacturer UMW
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V ID=250µA, VGS=0V 3
Zero Gate Voltage Drain Current IDSS 1 µA VDS=24V, VGS=0V 3
Zero Gate Voltage Drain Current (TJ=55°C) IDSS 10 µA VDS=24V, VGS=0V, TJ=55°C 3
Gate-Body Leakage IGSS 100 nA VGS=±20V, VDS=0V 3
Gate Threshold Voltage VGS(th) 1 1.8 3 V VDS=VGS, ID=250µA 3
On-State Drain Current ID(ON) 50 A VGS=10V, VDS=5V 3
Static Drain-Source On-Resistance (VGS=10V) RDS(ON) 6 mΩ VGS=10V, ID=13A 3
Static Drain-Source On-Resistance (VGS=4.5V) RDS(ON) 7.2 mΩ VGS=4.5V, ID=10.5A 3
Drain-Source Diode Forward Voltage VSD 0.7 1.2 V VGS=0V, IS=2.1A (Note 2) 4
Maximum Continuous Drain-Source Diode Forward Current IS 2.1 A 4
Drain-Source Voltage VDSS 30 V TA=25°C unless otherwise noted 1
Gate-Source Voltage VGSS -20 20 V TA=25°C unless otherwise noted 1
Drain Current, Continuous ID 13 A Note 1a; TA=25°C unless otherwise noted 1
Drain Current, Pulsed ID 50 A Note 1a; TA=25°C unless otherwise noted 1
Power Dissipation for Single Operation PD 2.5 W Note 1a; TA=25°C unless otherwise noted 1
Power Dissipation for Single Operation PD 1 W Note 1b; TA=25°C unless otherwise noted 1
Operating and Storage Junction Temperature Range TJ, TSTG -55 150 °C 1
Thermal Resistance, Junction-to-Ambient RθJA 50 °C/W Note 1a (mounted on 1 in² pad of 2 oz copper) 2
Thermal Resistance, Junction-to-Ambient RθJA 125 °C/W Note 1b (mounted on minimum pad) 2
Thermal Resistance, Junction-to-Case RθJC 25 °C/W Note 1 2
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ 26 mV/°C ID=250µA, referenced to 25°C 3
Gate Threshold Voltage Temperature Coefficient ΔVGS(th)/ΔTJ -5.3 mV/°C ID=250µA, referenced to 25°C 3
Forward Transconductance gFS 55 S VDS=15V, ID=13A 3
Input Capacitance Ciss 2220 pF VDS=15V, VGS=0V, f=1MHz 3
Output Capacitance Coss 535 pF VDS=15V, VGS=0V, f=1MHz 3
Reverse Transfer Capacitance Crss 200 pF VDS=15V, VGS=0V, f=1MHz 3
Gate Resistance RG 1.7 Ω VGS=15mV, f=1MHz 3
Turn-On Delay Time tD(on) 11 ns VDD=10V, ID=1A, VGS=10V, RGEN=6Ω 3
Turn-On Rise Time tr 13 ns VDD=10V, ID=1A, VGS=10V, RGEN=6Ω 3
Turn-Off Delay Time tD(off) 40 ns VDD=10V, ID=1A, VGS=10V, RGEN=6Ω 3
Turn-Off Fall Time tf 13 ns VDD=10V, ID=1A, VGS=10V, RGEN=6Ω 3
Total Gate Charge Qg 21 nC VDS=15V, ID=13A, VGS=5V 4
Gate-Source Charge Qgs 6 nC VDS=15V, ID=13A, VGS=5V 4
Gate-Drain Charge Qgd 7 nC VDS=15V, ID=13A, VGS=5V 4

CAD (KiCad official)

  • Symbol: FDS6670A
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: fds6670a-etched.step / fds6670a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fds6670a.step / fds6670a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (9 pp, sha256 3ac07edb181020a9, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF