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TM0072P03NF
Public Made by Adomby adom
Tritech-MOS MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTM0072P03NF
Tritech-MOS · MOSFETs · DFN5x6-8L
TM0072P03NF from Tritech-MOS, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, pin 1 at the marked corner; VDS is -30V and continuous ID is -60A at TC=25°C. |
| 2 | S | passive | Source of the P-channel MOSFET, tied to the other source pins; VDS is -30V and continuous ID is -60A at TC=25°C. |
| 3 | S | passive | Source of the P-channel MOSFET, tied to the other source pins; VDS is -30V and continuous ID is -60A at TC=25°C. |
| 4 | G | input | Gate of the P-channel MOSFET with VGS limited to ±20V and a threshold of -1.0V to -2.5V at ID=-250µA. |
| 5 | D | passive | Drain of the P-channel MOSFET, tied to the other drain pins; VDS is -30V and pulsed IDM is -168A. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied to the other drain pins; VDS is -30V and pulsed IDM is -168A. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied to the other drain pins; VDS is -30V and pulsed IDM is -168A. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied to the other drain pins; VDS is -30V and pulsed IDM is -168A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tritech-MOS |
| Package | DFN5x6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -60 | A | TC=25°C | 1 | ||
| Continuous Drain Current | ID | -35 | A | TC=100°C | 1 | ||
| Pulsed Drain Current | IDM | -168 | A | 1 | |||
| Total Power Dissipation | PD | 45 | W | TC=25°C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance Junction-to-Ambient | RθJA | 65 | °C/W | 1 | |||
| Thermal Resistance Junction-to-Case | RθJC | 3.36 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 | V | VGS = 0V, ID = -250µA | 2 | ||
| Gate-body Leakage current | IGSS | 100 | nA | VDS = 0V, VGS = ±20V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = -30V, VGS = 0V, TJ=25℃ | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -100 | µA | VDS = -30V, VGS = 0V, TJ=100℃ | 2 | ||
| Gate-Threshold Voltage | VGS(th) | -1 | -2.5 | V | VDS = VGS, ID = -250µA | 2 | |
| Drain-Source On-Resistance | RDS(on) | 7.2 | 9 | mΩ | VGS = -10V, ID = -30A | 2 | |
| Drain-Source On-Resistance | RDS(on) | 10 | 18 | mΩ | VGS = -4.5V, ID = -15A | 2 | |
| Diode Forward Voltage | VSD | -1.2 | V | IS = -1A, VGS = 0V | 2 | ||
| Continuous Source Current | IS | -60 | A | TC=25°C | 2 | ||
| Forward Transconductance | gfs | 57 | S | VDS = -5V, ID = -30A | 2 | ||
| Input Capacitance | Ciss | 2396 | pF | VDS = -15V, VGS =0V, f =1MHz | 2 | ||
| Output Capacitance | Coss | 325 | pF | VDS = -15V, VGS =0V, f =1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 283 | pF | VDS = -15V, VGS =0V, f =1MHz | 2 | ||
| Gate Resistance | Rg | 10.5 | Ω | f =1MHz | 2 | ||
| Total Gate Charge | Qg | 30 | nC | VGS = -10V, VDS = -15V, ID= -30A | 2 | ||
| Gate-Source Charge | Qgs | 5 | nC | VGS = -10V, VDS = -15V, ID= -30A | 2 | ||
| Gate-Drain Charge | Qgd | 7.5 | nC | VGS = -10V, VDS = -15V, ID= -30A | 2 | ||
| Turn-On Delay Time | td(on) | 14.1 | ns | VGS = -10V, VDD = -15V, RG = 3Ω, ID= -30A | 2 | ||
| Rise Time | tr | 20 | ns | VGS = -10V, VDD = -15V, RG = 3Ω, ID= -30A | 2 | ||
| Turn-Off Delay Time | td(off) | 94 | ns | VGS = -10V, VDD = -15V, RG = 3Ω, ID= -30A | 2 | ||
| Fall Time | tf | 65 | ns | VGS = -10V, VDD = -15V, RG = 3Ω, ID= -30A | 2 | ||
| Body Diode Reverse Recovery Time | trr | 19 | ns | IF = -30A, dI/dt = 100A/µs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 9 | nC | IF = -30A, dI/dt = 100A/µs | 2 |
CAD (KiCad official)
- Symbol:
TM0072P03NF - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files:
tm0072p03nf-etched.step/tm0072p03nf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tm0072p03nf.step/tm0072p03nf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Tritech-MOS datasheet (6 pp, sha256
576d7ee704b2bb01, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).