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DMN3150L-7

Public Made by Adom

by adom

Diodes Incorporated MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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DMN3150L-7

Diodes Incorporated · MOSFETs · SOT-23

DMN3150L-7 from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate input terminal controlling MOSFET switching action with maximum ±12V Gate-Source Voltage rating
2 Source power_in Source terminal providing reference potential for gate control and serving as current return path
3 Drain output Drain terminal through which load current flows with maximum ratings of 30V Drain-Source Voltage and 3.8A continuous current at 25°C

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 30 V 2
Gate-Source Voltage VGSS 12 V 2
Drain Current ID 3.8 A TA = +25°C 2
Drain Current ID 3.1 A TA = +70°C 2
Drain Current Pulsed IDM 15 A 2
Body-Diode Continuous Current IS 2 A 2
Total Power Dissipation PD 1.4 W 2
Thermal Resistance, Junction to Ambient RJA 90 °C/W @TA = +25°C (Note 5) 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Drain-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 250μA 2
Zero Gate Voltage Drain Current IDSS 800 nA VDS = 28V, VGS = 0V 2
Gate-Body Leakage IGSS 80 nA VGS = ±12V, VDS = 0V 2
Gate-Body Leakage IGSS 800 nA VGS = ±19V, VDS = 0V 2
Gate Threshold Voltage VGS(th) 0.62 0.92 1.4 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-Resistance RDS (ON) 39 54 mΩ VGS = 10V, ID = 3.8A 2
Static Drain-Source On-Resistance RDS (ON) 52 72 mΩ VGS = 4.5V, ID = 3.6A 2
Static Drain-Source On-Resistance RDS (ON) 90 115 mΩ VGS = 2.5V, ID = 3.1A 2
Forward Transconductance /Yfs/ 3 S VDS = 5V, ID = 3.1A 2
Source-Drain Diode Forward Voltage VSD 1.16 V VGS = 0V, IS = 2.0A 2

CAD (KiCad official)

  • Symbol: DMN3150L-7
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: dmn3150l-7-etched.step / dmn3150l-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn3150l-7.step / dmn3150l-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (5 pp, sha256 e9dfd4e2a0fc08cb, retrieved 2026-09-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-4-6 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF