component
IRF7319TRPBF-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRF7319TRPBF-HXY
HXY MOSFET · MOSFETs · SOP-8
IRF7319TRPBF-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of the N-channel MOSFET, part of the dual N+P-Channel device. |
| 2 | G1 | input | Gate of the N-channel MOSFET, rated VGS ±20V. |
| 3 | S2 | passive | Source terminal of the P-channel MOSFET, part of the dual N+P-Channel device. |
| 4 | G2 | input | Gate of the P-channel MOSFET, rated VGS ±20V. |
| 5 | D2 | passive | Drain of the P-channel MOSFET, rated VDS -30V. |
| 6 | D2 | passive | Drain of the P-channel MOSFET, rated VDS -30V. |
| 7 | D1 | passive | Drain of the N-channel MOSFET, rated VDS 30V. |
| 8 | D1 | passive | Drain of the N-channel MOSFET, rated VDS 30V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage N-Channel | VDS | 30 | V | N-Channel | 1 | ||
| Drain-Source Voltage P-Channel | VDS | -30 | V | P-Channel | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | N-Channel and P-Channel | 1 | |
| Continuous Drain Current TA=25°C N-Channel | ID | 6 | A | VGS @ 10V, TA=25°C | 1 | ||
| Continuous Drain Current TA=25°C P-Channel | ID | -5.5 | A | VGS @ 10V, TA=25°C | 1 | ||
| Continuous Drain Current TA=70°C N-Channel | ID | 5 | A | VGS @ 10V, TA=70°C | 1 | ||
| Continuous Drain Current TA=70°C P-Channel | ID | -4.3 | A | VGS @ 10V, TA=70°C | 1 | ||
| Pulsed Drain Current N-Channel | IDM | 30 | A | N-Channel | 1 | ||
| Pulsed Drain Current P-Channel | IDM | -30 | A | P-Channel | 1 | ||
| Single Pulse Avalanche Energy N-Channel | EAS | 5 | mJ | N-Channel | 1 | ||
| Single Pulse Avalanche Energy P-Channel | EAS | 26 | mJ | P-Channel | 1 | ||
| Total Power Dissipation N-Channel | PD | 2 | W | TA=25°C, N-Channel | 1 | ||
| Total Power Dissipation P-Channel | PD | 2 | W | TA=25°C, P-Channel | 1 | ||
| Storage Temperature Range N-Channel | TSTG | -55 | 150 | °C | N-Channel | 1 | |
| Storage Temperature Range P-Channel | TSTG | -55 | 150 | °C | P-Channel | 1 | |
| Operating Junction Temperature Range N-Channel | TJ | -55 | 150 | °C | N-Channel | 1 | |
| Operating Junction Temperature Range P-Channel | TJ | -55 | 150 | °C | P-Channel | 1 | |
| Thermal Resistance Junction-Ambient | RθJA | 62.5 | ℃/W | Note A, 1in2 FR-4 board | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 40 | ℃/W | Note 1 | 1 | ||
| Drain-Source Breakdown Voltage N-Channel | BVDSS | 30 | V | VGS=0V, ID=250µA | 2 | ||
| Zero Gate Voltage Drain Current N-Channel TJ=25°C | IDSS | 1 | µA | VDS=30V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current N-Channel TJ=55°C | IDSS | 5 | µA | VDS=30V, VGS=0V, TJ=55°C | 2 | ||
| Gate-Body Leakage Current N-Channel | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage N-Channel | VGS(th) | 1.2 | 1.8 | 2.4 | V | VDS=VGS ID=250µA | 2 |
| On State Drain Current N-Channel | ID(ON) | 30 | A | VGS=10V, VDS=5V | 2 | ||
| Static Drain-Source On-Resistance N-Channel | RDS(ON) | 22 | mΩ | VGS=10V, ID=6A | 2 | ||
| Diode Forward Voltage N-Channel | VSD | 0.76 | 1 | V | IS=1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current N-Channel | IS | 2.5 | A | 2 | |||
| Input Capacitance N-Channel | Ciss | 200 | 255 | 310 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Output Capacitance N-Channel | Coss | 30 | 45 | 60 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Reverse Transfer Capacitance N-Channel | Crss | 20 | 35 | 50 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Gate Resistance N-Channel | Rg | 1.6 | 3.25 | 4.9 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge (10V) N-Channel | Qg | 4 | 5.2 | 6 | nC | VGS=10V, VDS=15V, ID=6A | 2 |
| Total Gate Charge (4.5V) N-Channel | Qg | 2 | 2.55 | 3 | nC | 2 | |
| Body Diode Reverse Recovery Time N-Channel | trr | 8.5 | 12 | ns | IF=6A, dI/dt=100A/µs | 2 | |
| Body Diode Reverse Recovery Charge N-Channel | Qrr | 2.2 | 3 | nC | IF=6A, dI/dt=100A/µs | 2 | |
| Drain-Source Breakdown Voltage P-Channel | BVDSS | -30 | V | ID=-250µA, VGS=0V | 6 | ||
| Zero Gate Voltage Drain Current P-Channel TJ=25°C | IDSS | -1 | µA | VDS=-30V, VGS=0V | 6 | ||
| Zero Gate Voltage Drain Current P-Channel TJ=55°C | IDSS | -5 | µA | VDS=-30V, VGS=0V, TJ=55°C | 6 | ||
| Gate-Body Leakage Current P-Channel | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 6 | |
| Gate Threshold Voltage P-Channel | VGS(th) | -1.3 | -1.85 | -2.4 | V | VDS=VGS ID=-250µA | 6 |
| On State Drain Current P-Channel | ID(ON) | -30 | A | VGS=-10V, VDS=-5V | 6 | ||
| Static Drain-Source On-Resistance P-Channel | RDS(ON) | 45 | mΩ | VGS=-10V, ID=-6.5A | 6 | ||
| Diode Forward Voltage P-Channel | VSD | -0.8 | -1 | V | IS=-1A, VGS=0V | 6 | |
| Maximum Body-Diode Continuous Current P-Channel | IS | -2.5 | A | 6 | |||
| Gate Resistance P-Channel | Rg | 1.5 | 3.2 | 5 | Ω | VGS=0V, VDS=0V, f=1MHz | 6 |
| Total Gate Charge (10V) P-Channel | Qg | 13.6 | 16 | nC | VGS=10V, VDS=-15V, ID=-6.5A | 6 | |
| Total Gate Charge (4.5V) P-Channel | Qg | 6.7 | 8 | nC | 6 | ||
| Forward Transconductance N-Channel | FS | 15 | S | VDS=5V, ID=6A | 2 | ||
| Gate Source Charge N-Channel | Qgs | 0.85 | nC | 2 | |||
| Gate Drain Charge N-Channel | Qgd | 1.3 | nC | 2 | |||
| Turn-On Delay Time N-Channel | tD(on) | 4.5 | ns | VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω | 2 | ||
| Turn-On Rise Time N-Channel | tr | 2.5 | ns | VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω | 2 | ||
| Turn-Off Delay Time N-Channel | tD(off) | 14.5 | ns | VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω | 2 | ||
| Turn-Off Fall Time N-Channel | tf | 3.5 | ns | VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω | 2 | ||
| Forward Transconductance P-Channel | FS | 18 | S | VDS=-5V, ID=-6.5A | 6 | ||
| Gate Source Charge P-Channel | Qgs | 2.5 | nC | 6 | |||
| Gate Drain Charge P-Channel | Qgd | 3.2 | nC | 6 |
CAD (KiCad official)
- Symbol:
IRF7319TRPBF-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
irf7319trpbf-hxy-etched.step/irf7319trpbf-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf7319trpbf-hxy.step/irf7319trpbf-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (11 pp, sha256
b8cb0e731486ff55, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).