component
SPP11N80C3
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-220-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSPP11N80C3
Infineon Technologies · MOSFETs · TO-220-3
SPP11N80C3 from Infineon Technologies, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; static gate-source voltage limited to ±20 V (±30 V AC, f>1 Hz), threshold 2.1 to 3.9 V at ID=0.68 mA. |
| 2 | D | passive | Drain (also connected to the mounting tab); VDS 800 V, continuous drain current 11 A at TC=25 °C, 33 A pulsed. |
| 3 | S | passive | Source; connects to the load return or ground side of the switch, with diode forward current IS of 11 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | 11 | A | TC=25 °C | 1 | ||
| Continuous drain current | ID | 7.1 | A | TC=100 °C | 1 | ||
| Pulsed drain current | ID,pulse | 33 | A | TC=25 °C | 1 | ||
| Avalanche energy, single pulse | EAS | 470 | mJ | ID=2.2 A, VDD=50 V | 1 | ||
| Avalanche energy, repetitive | EAR | 0.2 | mJ | ID=11 A, VDD=50 V | 1 | ||
| Avalanche current, repetitive | IAR | 11 | A | 1 | |||
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | VDS=0…640 V | 1 | ||
| Gate source voltage, static | VGS | -20 | 20 | V | static | 1 | |
| Gate source voltage, AC | VGS | -30 | 30 | V | AC (f >1 Hz) | 1 | |
| Power dissipation | Ptot | 156 | W | TC=25 °C | 1 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 150 | °C | 1 | ||
| Mounting torque | 60 | Ncm | M3 and M3.5 screws | 1 | |||
| Continuous diode forward current | IS | 11 | A | TC=25 °C | 2 | ||
| Diode pulse current | IS,pulse | 33 | A | 2 | |||
| Reverse diode dv/dt | dv/dt | 4 | V/ns | ISD=ID, di/dt=200 A/µs, VDClink=400 V | 2 | ||
| Soldering temperature, wave soldering (leads) | Tsold | 260 | °C | 1.6 mm (0.063 in.) from case for 10 s | 2 | ||
| Thermal resistance, junction - case | RthJC | 0.8 | K/W | 2 | |||
| Thermal resistance, junction - ambient | RthJA | 62 | K/W | leaded | 2 | ||
| Drain-source breakdown voltage | V(BR)DSS | 800 | V | VGS=0 V, ID=250 µA | 2 | ||
| Gate threshold voltage | VGS(th) | 2.1 | 3 | 3.9 | V | VDS=VGS, ID=0.68 mA | 2 |
| Zero gate voltage drain current (Tj=25 °C) | IDSS | 20 | µA | VDS=800 V, VGS=0 V, Tj=25 °C | 2 | ||
| Gate-source leakage current | IGSS | 100 | nA | VGS=20 V, VDS=0 V | 2 | ||
| Drain-source on-state resistance (Tj=25 °C) | RDS(on) | 0.39 | 0.45 | Ω | VGS=10 V, ID=7.1 A, Tj=25 °C | 2 | |
| Gate charge total | Qg | 64 | 85 | nC | VDD=640 V, ID=11 A, VGS=0 to 10 V | 3 | |
| Diode forward voltage | VSD | 1 | 1.2 | V | VGS=0 V, IF=IS=11 A, Tj=25 °C | 3 |
CAD (KiCad official)
- Symbol:
SPP11N80C3 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220-3 (KiCad packages3D, STEP)
- 3D model files:
spp11n80c3-etched.step/spp11n80c3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);spp11n80c3.step/spp11n80c3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (10 pp, sha256
b4723a3a477e6497, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).