component
DMN2053U-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownDMN2053U-HXY
HXY MOSFET · MOSFETs · SOT-23
DMN2053U-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the MOSFET, with the gate-source voltage rated at ±12 V in the absolute maximum ratings. |
| 2 | D | passive | Drain terminal of the MOSFET, with continuous drain current rated at 6 A and pulsed drain current at 25 A (TA=25℃). |
| 3 | S | passive | Source terminal of the MOSFET, with the drain-source voltage rated at 20 V in the absolute maximum ratings. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Drain Current-Continuous | ID | 6 | A | 1 | |||
| Drain Current-Pulsed (Note 1) | IDM | 25 | A | 1 | |||
| Maximum Power Dissipation | PD | 0.35 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient (Note 2) | RθJA | 100 | ℃/W | Note 2 | 1 | ||
| Drain-source breakdown voltage | V(BR)DSS | 20 | V | VGS = 0V, ID = 250µA | 2 | ||
| Gate-source leakage current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±12V | 2 | |
| Zero gate voltage drain current | IDSS | 1 | µA | VDS = 16V, VGS = 0V | 2 | ||
| Gate threshold voltage | VGS(th) | 0.5 | 0.7 | 1 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-source on-state resistance (VGS = 4.5V, ID = 5.0A) | RDS(on) | 22 | 27 | mΩ | VGS = 4.5V, ID = 5.0A | 2 | |
| Diode forward voltage | VSD | 0.75 | 1 | V | VGS = 0V, IS = 1A | 2 |
CAD (KiCad official)
- Symbol:
DMN2053U-HXY - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
dmn2053u-hxy-etched.step/dmn2053u-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmn2053u-hxy.step/dmn2053u-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (5 pp, sha256
2ff25fc36c04f13e, retrieved 2026-11-12, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).