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Contents

README

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BT136S

Changjiang Electronics Tech (CJ) · TRIACs · TO-252-2L

BT136S from Changjiang Electronics Tech (CJ), in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 ANODE passive Main power terminal labelled ANODE in the TO-252-2L pinout; the device is rated for VDRM/VRRM 600 V and IT(RMS) 6 A at TC=107℃.
2 ANODE passive Second main power terminal labelled ANODE in the TO-252-2L pinout; the device is rated for ITSM 25 A (t=20ms) and an operating junction temperature range of -40 to +125℃.
3 GATE input Gate terminal for triggering the triac; peak gate current is limited to 2 A and average gate power dissipation to 0.5 W at Tj=125℃.

Key specifications

Parameter Value
Manufacturer Changjiang Electronics Tech (CJ)
Package TO-252-2L
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Rated repetitive peak off-state/reverse voltage VDRM,VRRM 600 V ID=10μA 1
Rated repetitive peak off-state current IDRM, IRRM 10 μA VD=620V 1
On-state voltage VTM 1.7 V IT=5A 1
Gate trigger current, quadrant I IGT 10 mA T2(+), G(+); VD=12V, RL=100Ω 1
Gate trigger current, quadrant II IGT 10 mA T2(+), G(-); VD=12V, RL=100Ω 1
Gate trigger current, quadrant III IGT 10 mA T2(-), G(-); VD=12V, RL=100Ω 1
Gate trigger voltage, quadrant I VGT 1.45 V T2(+), G(+); VD=12V, RL=100Ω 1
Gate trigger voltage, quadrant II VGT 1.45 V T2(+), G(-); VD=12V, RL=100Ω 1
Gate trigger voltage, quadrant III VGT 1.45 V T2(-), G(-); VD=12V, RL=100Ω 1
Holding current IH 20 mA IT=100mA, IG=20mA 1
RMS on-state current (full sine wave) IT(RMS) 6 A TC=107℃ 1
Non repetitive surge peak on-state current (full sine wave, Tj=25℃) ITSM 25 A t=20ms 1
Non repetitive surge peak on-state current (full sine wave, Tj=25℃) ITSM 27 A t=16.7ms 1
Peak gate current IGM 2 A 1
Average gate power dissipation PG(AV) 0.5 W Tj=125℃ 1
Storage junction temperature range Tstg -40 150 ℃ 1
Operating junction temperature range Tj -40 125 ℃ 1

CAD (KiCad official)

  • Symbol: BT136S
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: bt136s-etched.step / bt136s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bt136s.step / bt136s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjiang Electronics Tech (CJ) datasheet (1 pp, sha256 44ef16ded38adbee, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF