component
2SC6026MFV-Y
Public Made by Adomby adom
TOSHIBA Bipolar Transistors - BJT, SOT-723. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Contents
README
markdown2SC6026MFV-Y
TOSHIBA · Bipolar Transistors - BJT · SOT-723
2SC6026MFV-Y from TOSHIBA, in a SOT-723. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor, with base current IB rated at 30 mA maximum in the absolute maximum ratings. |
| 2 | EMITTER | passive | Emitter terminal of the NPN transistor, with emitter-base voltage VEBO rated at 5 V in the absolute maximum ratings. |
| 3 | COLLECTOR | passive | Collector terminal of the NPN transistor, with collector current IC rated at 150 mA maximum and collector-emitter voltage VCEO rated at 50 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | SOT-723 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | 60 | V | 1 | |||
| Collector-emitter voltage | VCEO | 50 | V | 1 | |||
| Emitter-base voltage | VEBO | 5 | V | 1 | |||
| Collector current | IC | 150 | mA | 1 | |||
| Base current | IB | 30 | mA | 1 | |||
| Collector power dissipation | PC | 150 | mW | *: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mmt) | 1 | ||
| Junction temperature | Tj | 150 | °C | 1 | |||
| Storage temperature range | Tstg | -55 | 150 | °C | 1 | ||
| Collector cutoff current | ICBO | 0.1 | μA | VCB = 60 V, IE = 0 | 2 | ||
| Emitter cutoff current | IEBO | 0.1 | μA | VEB = 5 V, IC = 0 | 2 | ||
| DC current gain (classification Y) | hFE | 120 | 240 | VCE = 6 V, IC = 2 mA | 2 | ||
| Collector-emitter saturation voltage | VCE (sat) | 0.15 | 0.25 | V | IC = 100 mA, IB = 10 mA | 2 | |
| Transition frequency | fT | 60 | MHz | VCE = 10 V, IC = 1 mA | 2 | ||
| Collector output capacitance | Cob | 0.95 | 3 | pF | VCB = 10 V, IE = 0, f = 1 MHz | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | PC | Base current IB 30 mA Collector power dissipation PC 150* mW | 1 |
CAD (KiCad official)
- Symbol:
2SC6026MFV-Y - Footprint:
Package_TO_SOT_SMD:SOT-723 - 3D model: SOT-723 (KiCad packages3D, STEP)
- 3D model files:
2sc6026mfv-y-etched.step/2sc6026mfv-y-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sc6026mfv-y.step/2sc6026mfv-y.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (4 pp, sha256
2ad4ae0abff55f64, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).