component
MMBT7002
Public Made by Adomby adom
ST Semtech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMMBT7002
ST Semtech · MOSFETs · SOT-23
MMBT7002 from ST Semtech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel enhancement MOSFET, rated for a continuous gate-source voltage of ±20 V and a non-repetitive ±40 V (tp < 50 µs). |
| 2 | Source | passive | Source of the N-channel enhancement MOSFET; the datasheet gives no pin-specific limit, with the device drain-source voltage rated at 60 V. |
| 3 | Drain | passive | Drain of the N-channel enhancement MOSFET, rated for a drain-source voltage (VDSS) of 60 V and a continuous drain current of 115 mA (pulsed 800 mA). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ST Semtech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain Source Breakdown Voltage | BVDSS | 60 | V | at ID = 10 µA | 1 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | at VDS = 60 V | 1 | ||
| Gate-Body Leakage Current | ±IGSS | 100 | nA | at VGS = ± 20 V | 1 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 2.5 | V | at VDS = VGS, ID = 250 µA | 1 | |
| On-State Drain Current | ID(ON) | 500 | mA | at VGS = 10 V, VDS = 7.5 V | 1 | ||
| Drain-Source On-Voltage | VDS(ON) | 3.75 | V | at VGS = 10 V, ID = 500 mA | 1 | ||
| Drain-Source On-Voltage | VDS(ON) | 1.5 | V | at VGS = 5 V, ID = 50 mA | 1 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 7.5 | Ω | at VGS = 10 V, ID = 500 mA | 1 | ||
| Forward Transconductance | gFS | 80 | mS | at VDS = 10 V, ID = 200 mA | 1 | ||
| Input Capacitance | Ciss | 50 | pF | at VDS = 25 V, f = 1 MHz | 1 | ||
| Output Capacitance | Coss | 25 | pF | at VDS = 25 V, f = 1 MHz | 1 | ||
| Reverse Transfer Capacitance | Crss | 5 | pF | at VDS = 25 V, f = 1 MHz | 1 | ||
| Turn-On Time | ton | 20 | ns | at VDD = 30 V, RL = 150 Ω, ID = 0.2 A, VGS = 10 V, RGEN = 25 Ω | 1 | ||
| Turn-Off Time | toff | 20 | ns | at VDD = 30 V, RL = 150 Ω, ID = 0.2 A, VGS = 10 V, RGEN = 25 Ω | 1 | ||
| Drain-Source Voltage | VDSS | 60 | V | Ta = 25 °C | 1 | ||
| Drain-Gate Voltage | VDGR | 60 | V | RGS ≤ 1 MΩ | 1 | ||
| Gate-Source Voltage Continuous | VGSS | -20 | 20 | V | Continuous; printed as ± 20 V | 1 | |
| Gate-Source Voltage Non-Repetitive | VGSS | -40 | 40 | V | Non-repetitive, tp < 50 µs; printed as ± 40 V | 1 | |
| Maximum Drain Current Continuous | ID | 115 | mA | Continuous, Ta = 25 °C | 1 | ||
| Maximum Drain Current Pulsed | ID | 800 | mA | Pulsed | 1 | ||
| Total Power Dissipation | Ptot | 200 | mW | Ta = 25 °C | 1 | ||
| Operating and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
MMBT7002 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
mmbt7002-etched.step/mmbt7002-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbt7002.step/mmbt7002.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ST Semtech datasheet (2 pp, sha256
f2c03acf8fc903fd, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).