component
TMG05N10MI
Public Made by Adomby adom
Tritech MOS MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTMG05N10MI
Tritech MOS · MOSFETs · SOT-23-3L
TMG05N10MI from Tritech MOS, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V with a threshold of 1.0 V min, 2.0 V typ and 3.0 V max at VDS = VGS, ID = 250 µA. |
| 2 | S | passive | Source; continuous drain current is 5.0 A at TA = 25 °C and the body diode continuous forward current is 5.0 A. |
| 3 | D | passive | Drain; drain-source voltage is rated at 100 V, with a pulsed drain current of 21 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tritech MOS |
| Package | SOT-23-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (ID@TA=25℃) | ID | 1 | A | TA=25℃; VGS @ 4.5V | 1 | ||
| Continuous Drain Current (ID@TA=70℃) | ID | 3.2 | A | TA=70℃; VGS @ 4.5V | 1 | ||
| Total Power Dissipation | PD | 1 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 170 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 | 110 | V | VGS = 0V, ID = 250μA | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 100V, VGS = 0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 2 | 3 | V | VDS = VGS, ID = 250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on) | 95 | 125 | mΩ | VGS = 10V, ID = 3A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | 5 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 12 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | 1.3 | V | VGS = 0V, IS = 3A | 2 |
CAD (KiCad official)
- Symbol:
TMG05N10MI - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files:
tmg05n10mi-etched.step/tmg05n10mi-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tmg05n10mi.step/tmg05n10mi.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Tritech MOS datasheet (7 pp, sha256
1869b8c0b3a69da1, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).