component
FCP11N60
Public Made by Adomby adom
onsemi MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFCP11N60
onsemi · MOSFETs · TO-220
FCP11N60 from onsemi, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel with VGS rated ±30 V maximum and threshold of 3.0 V to 5.0 V at ID = 250 µA. |
| 2 | D | passive | Drain (also connected to the tab); drain-source breakdown 600 V minimum and continuous drain current 11 A at TC = 25°C. |
| 3 | S | passive | Source; body diode continuous forward current 11 A and pulsed 33 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 600 | V | VGS = 0 V, ID = 250 µA, TJ = 25°C | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 600 V, VGS = 0 V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 480 V, TC = 125°C | 3 | ||
| Gate-Body Leakage Current, Forward | IGSSF | 100 | nA | VGS = 30 V, VDS = 0 V | 3 | ||
| Gate-Body Leakage Current, Reverse | IGSSR | -100 | nA | VGS = -30 V, VDS = 0 V | 3 | ||
| Gate Threshold Voltage | VGS(th) | 3 | 5 | V | VDS = VGS, ID = 250 µA | 3 | |
| Static Drain-Source On-Resistance | RDS(on) | 0.32 | 0.38 | Ω | VGS = 10 V, ID = 5.5 A | 3 | |
| Input Capacitance | Ciss | 1148 | 1490 | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 3 | |
| Output Capacitance | Coss | 671 | 870 | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 3 | |
| Reverse Transfer Capacitance | Crss | 63 | 82 | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 3 | |
| Turn-On Delay Time | td(on) | 34 | 80 | ns | VDD = 300 V, ID = 11 A, RG = 25 Ω | 3 | |
| Turn-On Rise Time | tr | 98 | 205 | ns | VDD = 300 V, ID = 11 A, RG = 25 Ω | 3 | |
| Turn-Off Delay Time | td(off) | 119 | 250 | ns | VDD = 300 V, ID = 11 A, RG = 25 Ω | 3 | |
| Turn-Off Fall Time | tf | 56 | 120 | ns | VDD = 300 V, ID = 11 A, RG = 25 Ω | 3 | |
| Total Gate Charge | Qg | 40 | 52 | nC | VDS = 480 V, ID = 11 A, VGS = 10 V | 3 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 11 | A | 3 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 33 | A | 3 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | VGS = 0 V, IS = 11 A | 3 | ||
| Drain Current - Continuous | ID | 11 | A | TC = 25°C | 2 | ||
| Drain Current - Pulsed | IDM | 33 | A | Note 1 | 2 | ||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 2 | ||
| Single Pulsed Avalanche Energy | EAS | 340 | mJ | Note 2 | 2 | ||
| Avalanche Current | IAR | 11 | A | Note 1 | 2 | ||
| Repetitive Avalanche Energy | EAR | 12.5 | mJ | Note 1 | 2 | ||
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns | Note 3 | 2 | ||
| Power Dissipation | PD | 125 | W | TC = 25°C | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Maximum lead temperature for soldering | TL | 300 | °C | 1/8" from case for 5 seconds | 2 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 1 | °C/W | 2 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62.5 | °C/W | 2 | |||
| Thermal Resistance, Case-to-Sink | RθCS | 0.5 | °C/W | 2 | |||
| Power Dissipation Derating | PD | 1 | W/°C | Derate above 25°C | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS = 0 V, ID = 250 µA, TJ = 150°C | 3 | ||
| Breakdown Voltage Temperature Coefficient | ∆BVDSS/∆TJ | 0.6 | V/°C | ID = 250 µA, Referenced to 25°C | 3 | ||
| Drain-Source Avalanche Breakdown Voltage | BVDS | 700 | V | VGS = 0 V, ID = 11 A | 3 | ||
| Forward Transconductance | gFS | 9.7 | S | VDS = 40 V, ID = 5.5 A (Note 4) | 3 | ||
| Output Capacitance | Coss | 35 | pF | VDS = 480 V, VGS = 0 V, f = 1.0 MHz | 3 | ||
| Effective Output Capacitance | Coss eff. | 95 | pF | VDS = 0V to 480 V, VGS = 0 V | 3 | ||
| Gate-Source Charge | Qgs | 7.2 | nC | VDS = 480 V, ID = 11 A, VGS = 10 V | 3 | ||
| Gate-Drain Charge | Qgd | 21 | nC | VDS = 480 V, ID = 11 A, VGS = 10 V | 3 | ||
| Reverse Recovery Time | trr | 390 | ns | VGS = 0 V, IS = 11 A, dIF/dt = 100 A/µs (Note 4) | 3 | ||
| Reverse Recovery Charge | Qrr | 5.7 | µC | VGS = 0 V, IS = 11 A, dIF/dt = 100 A/µs (Note 4) | 3 |
CAD (KiCad official)
- Symbol:
FCP11N60 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
fcp11n60-etched.step/fcp11n60-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fcp11n60.step/fcp11n60.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (11 pp, sha256
c11c8c75502ab82a, retrieved 2026-10-30, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).