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SI2301CDS-T1-GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI2301CDS-T1-GE3
Vishay Intertech · MOSFETs · SOT-23
SI2301CDS-T1-GE3 from Vishay Intertech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; apply control voltage between ±8 V relative to source to modulate drain-source conduction. |
| 2 | Source | passive | Source terminal serving as reference for gate-source voltage control and supporting continuous source-drain diode current up to 1.3 A at TC = 25°C. |
| 3 | Drain | passive | Drain terminal rated for maximum drain-source voltage of 20 V and continuous drain current of 3.1 A at TC = 25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | 1 | |||
| Gate-Source Voltage | VGS | -8 | 8 | V | 1 | ||
| Continuous Drain Current | ID | -3.1 | A | TJ = 150 °C, TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | -2.5 | A | TJ = 150 °C, TC = 70 °C | 1 | ||
| Continuous Drain Current | ID | -2.3 | A | TJ = 150 °C, TA = 25 °C (notes b, c) | 1 | ||
| Continuous Drain Current | ID | -1.8 | A | TJ = 150 °C, TA = 70 °C (notes b, c) | 1 | ||
| Pulsed Drain Current | IDM | -10 | A | 1 | |||
| Continuous Source-Drain Diode Current | IS | -1.3 | A | TC = 25 °C | 1 | ||
| Continuous Source-Drain Diode Current | IS | -0.72 | A | TA = 25 °C (notes b, c) | 1 | ||
| Maximum Power Dissipation | PD | 1.6 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 1 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation | PD | 0.86 | W | TA = 25 °C (notes b, c) | 1 | ||
| Maximum Power Dissipation | PD | 0.55 | W | TA = 70 °C (notes b, c) | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient, 5 s | RthJA | 120 | 145 | °C/W | 5 s (notes b, d) | 1 | |
| Maximum Junction-to-Ambient, steady state | RthJA | 175 | °C/W | Steady state (note d) | 1 | ||
| Maximum Junction-to-Foot (Drain), steady state | RthJF | 62 | 78 | °C/W | Steady state | 1 | |
| Drain-Source Breakdown Voltage | VDS | -20 | V | VGS = 0 V, ID = - 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -0.4 | -1 | V | VDS = VGS, ID = - 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 8 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = - 20 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -10 | µA | VDS = - 20 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | -6 | A | VDS - 5 V, VGS = - 4.5 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.09 | 0.112 | Ω | VGS = - 4.5 V, ID = - 2.8 A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.11 | 0.142 | Ω | VGS = - 2.5 V, ID = - 2.0 A | 2 | |
| Total Gate Charge | Qg | 5.5 | 10 | nC | VDS = - 10 V, VGS = - 4.5 V, ID = - 3 A | 2 | |
| Total Gate Charge | Qg | 3.3 | 6 | nC | VDS = - 10 V, VGS = - 2.5 V, ID = - 3 A | 2 | |
| Turn-On Delay Time | td(on) | 11 | 20 | ns | VDD = - 10 V, RL = 10 Ω, ID = - 1 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 35 | 60 | ns | VDD = - 10 V, RL = 10 Ω, ID = - 1 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 30 | 50 | ns | VDD = - 10 V, RL = 10 Ω, ID = - 1 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 10 | 20 | ns | VDD = - 10 V, RL = 10 Ω, ID = - 1 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 | |
| Body Diode Voltage | VSD | -0.8 | -1.2 | V | IS = - 0.7 A | 2 | |
| Body Diode Reverse Recovery Time | trr | 30 | 50 | ns | IF = - 3.0 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 25 | 50 | nC | IF = - 3.0 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
CAD (KiCad official)
- Symbol:
SI2301CDS-T1-GE3 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
si2301cds-t1-ge3-etched.step/si2301cds-t1-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2301cds-t1-ge3.step/si2301cds-t1-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (9 pp, sha256
54dbab870c4de746, retrieved 2026-09-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.2, primaryclaude-haiku-4-5-20251001(text), consensusclaude-sonnet-4-6(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).