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NDS352AP-NL-VB
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VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNDS352AP-NL-VB
VBsemi Elec · MOSFETs · SOT-23(TO-236)
NDS352AP-NL-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; gate-source voltage VGS is rated at ±20 V. |
| 2 | S | passive | Source of the P-channel MOSFET; the device is rated for a drain-source voltage VDS of -30 V. |
| 3 | D | passive | Drain of the P-channel MOSFET; continuous drain current ID is -5.6 A at TC = 25 °C and VDS is -30 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Continuous Drain Current, TC = 25 °C | ID | -5.6 | A | TJ = 150 °C, TC = 25 °C | 1 | ||
| Continuous Drain Current, TA = 25 °C | ID | -5.4 | A | TA = 25 °C (note b,c) | 1 | ||
| Continuous Drain Current, TA = 70 °C | ID | -4.3 | A | TA = 70 °C (note b,c) | 1 | ||
| Pulsed Drain Current | IDM | -18 | A | t = 100 µs | 1 | ||
| Continuous Source-Drain Diode Current, TC = 25 °C | IS | -2.1 | A | TC = 25 °C | 1 | ||
| Continuous Source-Drain Diode Current, TA = 25 °C | IS | -1 | A | TA = 25 °C (note b,c) | 1 | ||
| Maximum Power Dissipation, TC = 25 °C | PD | 2.5 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation, TC = 70 °C | PD | 1.6 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation, TA = 25 °C | PD | 1.25 | W | TA = 25 °C (note b,c) | 1 | ||
| Maximum Power Dissipation, TA = 70 °C | PD | 0.8 | W | TA = 70 °C (note b,c) | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient, t ≤ 5 s | RthJA | 75 | 100 | °C/W | t ≤ 5 s (notes b,d) | 1 | |
| Maximum Junction-to-Ambient, steady state | RthJA | 166 | °C/W | Steady state (note d; surface mounted on 1 in x 1 in FR4 board) | 1 | ||
| Maximum Junction-to-Foot (Drain), steady state | RthJF | 40 | 50 | °C/W | Steady state | 1 | |
| Drain-Source Breakdown Voltage | VDS | -30 | V | VGS = 0 V, ID = -250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -0.5 | -2 | V | VDS = VGS, ID = -250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = -30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current, TJ = 55 °C | IDSS | -5 | µA | VDS = -30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | -2.5 | A | VDS = -5 V, VGS = -10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.046 | Ω | VGS = -10 V, ID = -4.4 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.049 | Ω | VGS = -6 V, ID = -4 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.054 | Ω | VGS = -4.5 V, ID = -3.6 A | 2 | ||
| Total Gate Charge | Qg | 24 | 36 | nC | VDS = -15 V, VGS = -10 V, ID = -5.4 A | 2 | |
| Total Gate Charge | Qg | 11.4 | 17 | nC | VDS = -15 V, VGS = -4.5 V, ID = -5.4 A | 2 | |
| Gate Resistance | Rg | 1.5 | 7.7 | 15.4 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time, VGEN = -10 V | td(on) | 13 | 20 | ns | VDD = -15 V, RL = 3.5 Ω, ID -4.3 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time, VGEN = -10 V | td(off) | 38 | 57 | ns | VDD = -15 V, RL = 3.5 Ω, ID -4.3 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Fall Time, VGEN = -10 V | tf | 6 | 12 | ns | VDD = -15 V, RL = 3.5 Ω, ID -4.3 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Turn-On Delay Time, VGEN = -4.5 V | td(on) | 28 | 42 | ns | VDD = -15 V, RL = 3.5 Ω, ID -4.3 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Rise Time, VGEN = -4.5 V | tr | 16 | 24 | ns | VDD = -15 V, RL = 3.5 Ω, ID -4.3 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time, VGEN = -4.5 V | td(off) | 30 | 45 | ns | VDD = -15 V, RL = 3.5 Ω, ID -4.3 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Fall Time, VGEN = -4.5 V | tf | 10 | 20 | ns | VDD = -15 V, RL = 3.5 Ω, ID -4.3 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Body Diode Voltage | VSD | -0.8 | -1.2 | V | IS = -4.3 A, VGS = 0 V | 2 | |
| Body Diode Reverse Recovery Time | trr | 15 | 23 | ns | IF = -4.3 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 7 | 14 | nC | IF = -4.3 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
CAD (KiCad official)
- Symbol:
NDS352AP-NL-VB - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files:
nds352ap-nl-vb-etched.step/nds352ap-nl-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nds352ap-nl-vb.step/nds352ap-nl-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
5fbaee7dd92dc4f7, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).