component
CMD060N10
Public Made by Adomby adom
Cmos MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownCMD060N10
Cmos · MOSFETs · TO-252
CMD060N10 from Cmos, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the 100V N-channel MOSFET, rated for a gate-source voltage of ±20 V (VGS). |
| 2 | D | passive | Drain terminal, rated for a drain-source voltage of 100 V (VDS) and 80 A continuous drain current at TC=25℃. |
| 3 | S | passive | Source terminal of the MOSFET, rated for a continuous source current of 80 A (IS) per the diode characteristics. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 80 | A | 1 | |||
| Continuous Drain Current | ID@TC=100℃ | 60 | A | 1 | |||
| Pulsed Drain Current | IDM | 320 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 100 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient (min. footprint) | RθJA | 62 | ℃/W | 1 | |||
| Thermal Resistance Junction-case | RθJC | 1.25 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V , ID=250μA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VGS=VDS , ID =250uA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=100V,VGS=0V , Tj =25℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS ±20V , VDS=0V | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 7 | mΩ | VGS=10V , ID=28A | 2 | ||
| Continuous Source Current | IS | 80 | A | 2 | |||
| Pulsed Source Current | ISM | 320 | A | VG=VD=0V , Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V , IS=28A , Tj =25℃ | 2 |
CAD (KiCad official)
- Symbol:
CMD060N10 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
cmd060n10-etched.step/cmd060n10-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmd060n10.step/cmd060n10.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos datasheet (5 pp, sha256
8620d0f103a26b7a, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).