Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

KGF25N120KDA

KEC Semicon · IGBT Transistors / Modules · TO-247-3

KGF25N120KDA from KEC Semicon, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-emitter voltage limited to ±20 V (VGES), threshold VGE(th) 4.5 V min to 7.0 V max at IC=25 mA.
2 C passive Collector (also connected to the mounting tab in the package drawing); VCES 1200 V, IC 50 A at Tc=25 °C and 25 A at Tc=100 °C, ICM 75 A.
3 E passive Emitter; IGBT emitter and anti-parallel diode anode, with diode continuous forward current IF 25 A at Tc=100 °C.

Key specifications

Parameter Value
Manufacturer KEC Semicon
Package TO-247-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCES 1200 V 1
Gate-Emitter Voltage VGES -20 20 V 1
Collector Current @Tc=25 IC 50 A Tc=25 1
Collector Current @Tc=100 IC 25 A Tc=100 1
Pulsed Collector Current ICM 75 A Repetitive rating: pulse width limited by max. junction temperature 1
Diode Continuous Forward Current @Tc=100 IF 25 A Tc=100 1
Diode Maximum Forward Current IFM 75 A 1
Maximum Power Dissipation @Tc=25 PD 227 W Tc=25 1
Maximum Power Dissipation @Tc=100 PD 91 W Tc=100 1
Maximum Junction Temperature Tj 150 °C 1
Storage Temperature Range Tstg -55 150 °C 1
Thermal Resistance, Junction to Case (IGBT) Rth JC 0.55 /W 1
Thermal Resistance, Junction to Case (DIODE) Rth JC 1.7 /W 1
Thermal Resistance, Junction to Ambient Rth JA 40 /W 1
Collector-Emitter Breakdown Voltage BVCES 1200 V VGE=0V, IC=1mA 2
Collector Cut-off Current ICES 1 mA VGE=0V, VCE=1200V 2
Gate Leakage Current IGES -100 100 nA VCE=0V, VGE=±20V 2
Gate Threshold Voltage VGE(th) 4.5 5.5 7 V VGE=VCE, IC=25mA 2
Collector-Emitter Saturation Voltage (IC=25A, 25°C row) VCE(sat) 2 2.4 V VGE=15V, IC=25A 2
Turn-On Switching Loss (TC=25) Eon 1.85 2.4 mJ VCC=600V, IC=25A, VGE=15V, RG=10, Inductive Load, TC=25 2
Turn-Off Switching Loss (TC=25) Eoff 0.9 1.2 mJ VCC=600V, IC=25A, VGE=15V, RG=10, Inductive Load, TC=25 2
Total Switching Loss (TC=25) Ets 2.75 3.6 mJ VCC=600V, IC=25A, VGE=15V, RG=10, Inductive Load, TC=25 2
Input Capacitance Cies 2650 3450 pF VCE=30V, VGE=0V, f=1MHz 2
Short Circuit Withstand Time tsc 10 μs VCC=600V, VGE=15V, TC=100 2
Diode Forward Voltage (TC=25) VF 2.4 3 V IF=25A, TC=25 3

CAD (KiCad official)

  • Symbol: KGF25N120KDA
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: kgf25n120kda-etched.step / kgf25n120kda-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); kgf25n120kda.step / kgf25n120kda.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: KEC Semicon datasheet (8 pp, sha256 0ed14d0610f375c9, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF