component
AO3416AI-MS
Public Made by Adomby adom
MSKSEMI MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownAO3416AI-MS
MSKSEMI · MOSFETs · SOT-23
AO3416AI-MS from MSKSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; VGS maximum ±12V, threshold 0.45V min to 1.0V max at 250µA, with 2500V HBM ESD protection. |
| 2 | S | passive | Source of the N-channel MOSFET; body diode forward voltage up to 1.2V at IS=6.5A, continuous diode current up to 6.5A. |
| 3 | D | passive | Drain of the N-channel MOSFET; VDS maximum 20V, continuous ID 6A, pulsed IDM 30A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS=0V, ID=250μA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=20V, VGS=0V | 3 | ||
| Gate-Body Leakage Current | IGSS | -10 | 10 | μA | VGS=±10V, VDS=0V | 3 | |
| Gate Threshold Voltage | VGS(th) | 0.45 | 0.7 | 1 | V | VDS=VGS, ID=250μA | 3 |
| Drain-Source On-State Resistance | RDS(ON) | 14 | 17 | mΩ | VGS=4.5V, ID=6.5A | 3 | |
| Drain-Source On-State Resistance | RDS(ON) | 18 | 23 | mΩ | VGS=2.5V, ID=5.5A | 3 | |
| Drain-Source On-State Resistance | RDS(ON) | 28 | 40 | mΩ | VGS=1.8V, ID=5A | 3 | |
| Forward Transconductance | gFS | 8 | S | VDS=5V, ID=6.5A | 3 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=6.5A | 3 | ||
| Diode Forward Current | IS | 6.5 | A | 3 | |||
| Drain-Source Voltage | VDS | 20 | V | 2 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 2 | ||
| Drain Current-Continuous | ID | 6 | A | 2 | |||
| Drain Current-Pulsed (Note 1) | IDM | 30 | A | Note 1 | 2 | ||
| Maximum Power Dissipation | PD | 1.4 | W | 2 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 89 | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 2 |
CAD (KiCad official)
- Symbol:
AO3416AI-MS - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
ao3416ai-ms-etched.step/ao3416ai-ms-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao3416ai-ms.step/ao3416ai-ms.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (7 pp, sha256
f8be9762877a3f83, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).