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AONR21321-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAONR21321-HXY
HXY MOSFET · MOSFETs · DFN5x6-8L
AONR21321-HXY from HXY MOSFET, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, tied with pins 2 and 3; device is rated VDS = -30V and ID = -50A. |
| 2 | S | passive | Source of the P-channel MOSFET, tied with pins 1 and 3; continuous diode forward current IS is -12A max. |
| 3 | S | passive | Source of the P-channel MOSFET, tied with pins 1 and 2; gate-source voltage limit is ±20V. |
| 4 | G | input | Gate; gate-source voltage is rated ±20V max, with threshold VGS(th) of -1V min, -1.5V typ, -3V max at ID=-250μA. |
| 5 | D | passive | Drain, tied with pins 6-8; drain-source voltage is -30V max and RDS(ON) is below 15mΩ at VGS=-10V. |
| 6 | D | passive | Drain, tied with pins 5, 7 and 8; continuous drain current is -50A at TC=25℃ and pulsed drain current is -80A. |
| 7 | D | passive | Drain, tied with pins 5, 6 and 8; RDS(ON) is below 25mΩ at VGS=-4.5V. |
| 8 | D | passive | Drain, tied with pins 5-7; zero-gate-voltage drain current IDSS is 1μA max at VDS=-30V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN5x6-8L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 | -33 | V | VGS=0V ID=-250μA | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=-30V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.5 | -3 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 9 | 15 | mΩ | VGS=-10V, ID=-10A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 18 | 25 | mΩ | VGS=-4.5V, ID=-7A | 2 | |
| Diode Forward Current | IS | -12 | A | 2 | |||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V,IS=-12A | 2 | ||
| Drain-Source Voltage | VDS | -30 | V | TA=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA=25℃ | 1 | |
| Drain Current-Continuous | ID | -50 | A | TC=25℃ | 1 | ||
| Drain Current-Continuous | ID | -24 | A | TC=100℃ | 1 | ||
| Drain Current-Pulsed | IDM | -80 | A | Note 1 | 1 | ||
| Maximum Power Dissipation | PD | 3 | W | TC=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 1.3 | W | TC=100℃ | 1 | ||
| Single pulse avalanche energy | EAS | 231 | mJ | Note 5 | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 41.67 | ℃/W | Note 2 | 1 | ||
| Forward Transconductance | gFS | 20 | S | VDS=-10V,ID=-10A | 2 | ||
| Input Capacitance | Clss | 1750 | PF | VDS=-15V,VGS=0V, F=1.0MHz | 2 | ||
| Output Capacitance | Coss | 215 | PF | VDS=-15V,VGS=0V, F=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 180 | PF | VDS=-15V,VGS=0V, F=1.0MHz | 2 | ||
| Turn-on Delay Time | td(on) | 9 | nS | VDD=-15V, ID=-10A, VGS=-10V,RGEN=1Ω | 2 | ||
| Turn-on Rise Time | tr | 8 | nS | VDD=-15V, ID=-10A, VGS=-10V,RGEN=1Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 28 | nS | VDD=-15V, ID=-10A, VGS=-10V,RGEN=1Ω | 2 | ||
| Turn-Off Fall Time | tf | 10 | nS | VDD=-15V, ID=-10A, VGS=-10V,RGEN=1Ω | 2 | ||
| Total Gate Charge | Qg | 24 | nC | VDS=-15V,ID=-10A,VGS=-10V | 2 | ||
| Gate-Source Charge | Qgs | 3.5 | nC | VDS=-15V,ID=-10A,VGS=-10V | 2 | ||
| Gate-Drain Charge | Qgd | 6 | nC | VDS=-15V,ID=-10A,VGS=-10V | 2 |
CAD (KiCad official)
- Symbol:
AONR21321-HXY - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files:
aonr21321-hxy-etched.step/aonr21321-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aonr21321-hxy.step/aonr21321-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (7 pp, sha256
c90010a3d37e3fb3, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).