component
MD5035E30QA3
Public Made by Adomby adom
Shanghai Mingda Microelectronics Voltage Regulators - Linear, Low Drop Out (LDO) Regulators, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownMD5035E30QA3
Shanghai Mingda Microelectronics · Voltage Regulators - Linear, Low Drop Out (LDO) Regulators · SOT-23-3L
MD5035E30QA3 from Shanghai Mingda Microelectronics, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GND | power_in | Ground reference for the regulator. |
| 2 | VOUT | power_out | Regulated 3.0V output (MD5035E30), up to 200mA, with 1.0µF or larger low-ESR ceramic output capacitor. |
| 3 | VIN | power_in | Input supply, 2V to 6.0V operating range (absolute maximum 7V), with 1.0µF or larger input capacitor. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shanghai Mingda Microelectronics |
| Package | SOT-23-3L |
| Category | Power Management (PMIC) |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Input voltage | VIN | -0.3 | 7 | V | 2 | ||
| Operating ambient temperature | Topr | -40 | 85 | ℃ | 2 | ||
| Storage temperature | Tstg | -40 | 125 | ℃ | 2 | ||
| Power dissipation (SOT23-3) | PD | 250 | mW | SOT23-3 | 2 | ||
| ESD protection HBM | ESD HBM | 8000 | V | 2 | |||
| Output voltage accuracy (feature) | VOUT(S) | -2 | 2 | % | Highly accurate ±2% (Features list) | 1 | |
| Temperature stability (feature) | -30 | 30 | ppm/℃ | Features list: ±30ppm/℃ | 1 | ||
| Output voltage (nominal, MD5035E30) | VOUT(S) | 3 | V | VIN=VEN=VOUT(S)+1.0, IOUT=10mA; MIN/MAX printed as 0.98 VOUT(S) and 1.02 VOUT(S) | 3 | ||
| Line regulation | VOUT1 | 1 | mV | VOUT(S)+0.5V≤VIN=VEN≤6V, IOUT=10mA | 3 | ||
| Load regulation | VOUT2 | 14 | mV | VIN=VEN=VOUT(S)+1.0V, 1mA≤IOUT≤200mA | 3 | ||
| GND current | IGND | 50 | nA | no load (VEN=VIN) | 3 | ||
| GND current | IGND | 0.12 | uA | Iout=5uA | 3 | ||
| GND current | IGND | 1.44 | uA | Iout=1mA | 3 | ||
| GND current | IGND | 165 | uA | Iout=100mA | 3 | ||
| GND current | IGND | 290 | uA | Iout=200mA | 3 | ||
| GND current in dropout | IGND(DO) | 45 | nA | Iout=0mA, Vin=95%*Vout(nom) | 3 | ||
| Shutdown current | ISHDN | 5 | nA | VIN≤5V, VEN=0 | 3 | ||
| Shutdown current | ISHDN | 26 | nA | VIN=6V, VEN=0 | 3 | ||
| Current limit | ILIM | 460 | mA | VIN=VEN=VOUT(S)+1.0V, VOUT = 0.95 ×VOUT(S) | 3 | ||
| Short circuit current | ISHORT | 65 | mA | VIN=VEN=VOUT(S)+1.0V, VOUT=0V | 3 | ||
| Dropout voltage | VDROP | 75 | mV | VEN=VIN, VOUT=3V, IOUT=0mA | 3 | ||
| Dropout voltage | VDROP | 200 | mV | VEN=VIN, VOUT=3V, IOUT=200mA | 3 | ||
| Power supply rejection ratio | PSRR | 50 | dB | f=1KHz, IOUT=30mA | 3 | ||
| Output voltage noise | VN | 340 | uVRMS | BW = 10 Hz to 100 kHz, VOUT = 3.3 V, IOUT = 30 mA | 3 | ||
| Temperature stability | 40 | ppm/℃ | VIN=VEN=VOUT(S)+1.0V, IOUT=1mA, -40℃≤Ta≤125℃ | 3 | |||
| UVLO rising threshold | Vuvlo | 1.23 | V | Rising | 3 | ||
| UVLO falling threshold | Vuvlo | 1.06 | V | Failling (as printed) | 3 | ||
| UVLO hysteresis | VUVLO(HYST) | 170 | mV | VIN hysteresis | 3 | ||
| EN high level voltage | VENH | 1.5 | V | 3 | |||
| EN low level voltage | VENL | 0.5 | V | 3 | |||
| EN pin leakage current | IEN | 5 | nA | VEN=VIN = 6.0 V | 3 | ||
| Smart enable pulldown resistor | REN(PULLDOWN) | 550 | KΩ | VEN = 0.3 V | 3 | ||
| Pulldown resistor | RPULLDOWN | 60 | Ω | VIN = 3.3 V, device disabled | 3 | ||
| Thermal shutdown temperature | TSD(shutdown) | 155 | °C | Shutdown, temperature increasing | 3 | ||
| Thermal shutdown reset temperature | TSD(reset) | 145 | °C | Reset, temperature decreasing | 3 | ||
| Start-up time | tSTR | 850 | uS | From EN assertion to VOUT = 90% × VOUT(nom), VOUT=3.0V | 3 | ||
| Thermal resistance junction-to-ambient (SOT23-3) | RθJA | 200 | ℃/W | SOT23-3 | 2 |
CAD (KiCad official)
- Symbol:
MD5035E30QA3 - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files:
md5035e30qa3-etched.step/md5035e30qa3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);md5035e30qa3.step/md5035e30qa3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shanghai Mingda Microelectronics datasheet (17 pp, sha256
2dc458d472487a35, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).