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SVS20N60FJD2
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Hangzhou Silan Microelectronics MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSVS20N60FJD2
Hangzhou Silan Microelectronics · MOSFETs · TO-220F-3
SVS20N60FJD2 from Hangzhou Silan Microelectronics, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; the gate-source voltage is rated ±30 V (VGS). |
| 2 | D | passive | Drain of the MOSFET; rated 600 V drain-source (VDS), 20 A continuous drain current at TC=25°C, and 80 A pulsed drain current (IDM). |
| 3 | S | passive | Source of the MOSFET; continuous source current is limited to 20 A and source pulse current to 80 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Hangzhou Silan Microelectronics |
| Package | TO-220F-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 600 | V | 2 | |||
| Gate-source voltage | VGS | -30 | 30 | V | 2 | ||
| Drain current | ID | 20 | A | TC=25°C | 2 | ||
| Drain current | ID | 12 | A | TC=100°C | 2 | ||
| Drain pulse current | IDM | 80 | A | 2 | |||
| Power dissipation | PD | 45 | W | TC=25°C | 2 | ||
| Power dissipation derating | PD | 0.36 | W/C | derate above 25°C | 2 | ||
| Single pulse avalanche energy | EAS | 967 | mJ | 2 | |||
| Body diode dv/dt ruggedness | dv/dt | 15 | V/ns | 2 | |||
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | 2 | |||
| Operating junction temperature range | TJ | -55 | 150 | C | 2 | ||
| Storage temperature range | Tstg | -55 | 150 | C | 2 | ||
| Thermal resistance junction-to-case | RθJC | 2.78 | C/W | 2 | |||
| Thermal resistance junction-to-ambient | RθJA | 62.5 | C/W | 2 | |||
| Drain-source breakdown voltage | BVDSS | 600 | V | VGS=0V, ID=250µA | 3 | ||
| Drain-source leakage current | IDSS | 200 | nA | VDS=600V, VGS=0V | 3 | ||
| Gate-source leakage current | IGSS | -100 | 100 | nA | VGS=±30V, VDS=0V | 3 | |
| Gate threshold voltage | VGS(th) | 2 | 4 | V | VGS=VDS, ID=250µA | 3 | |
| Static drain-source on-resistance | RDS(on) | 0.16 | 0.19 | Ω | VGS=10V, ID=10A, Tj=25C | 3 | |
| Continuous source current | IS | 20 | A | MOS管中源极、漏极构成的反偏 P-N结 | 3 | ||
| Source pulse current | ISM | 80 | A | 3 | |||
| Diode forward voltage | VSD | 1.2 | V | IS=20A, VGS=0V | 3 |
CAD (KiCad official)
- Symbol:
SVS20N60FJD2 - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F-3 (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Hangzhou Silan Microelectronics datasheet (10 pp, sha256
8fa100e00282c0b2, retrieved 2026-10-15, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).