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RGPR30BM40HRTL

Public Made by Adom

by adom

ROHM Semicon IGBT Transistors / Modules, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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RGPR30BM40HRTL

ROHM Semicon · IGBT Transistors / Modules · TO-252

RGPR30BM40HRTL from ROHM Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal with built-in gate-emitter protection diode (BVGES 12 to 17 V) and built-in gate-emitter resistance RGE of 8 to 24 kΩ; absolute maximum VGES is 10 V.
2 Collector passive Collector terminal; collector-emitter voltage VCES is 430 V maximum, collector current IC is 30 A, and BVCES is 370 to 430 V (self-clamped).
3 Emitter passive Emitter terminal; emitter-collector voltage VEC is 25 V maximum.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCES 430 V TC = 25°C 1
Gate-Emitter Voltage VGES 10 V TC = 25°C 1
Emitter-Collector Voltage VEC 25 V VGE = 0V 1
Collector Current IC 30 A TC = 25°C 1
Power Dissipation PD 125 W TC = 25°C 1
Avalanche Energy (Single Pulse) EAS 300 mJ Tj = 25°C 1
Avalanche Energy (Single Pulse) EAS 180 mJ Tj = 150°C 1
Operating Junction Temperature Tj -40 175 °C 1
Storage Temperature Tstg -55 175 °C 1
Thermal Resistance IGBT Junction-Case Rθ(j-c) 1.2 °C/W 2
Collector-Emitter Breakdown Voltage BVCES 370 400 430 V IC = 2mA, VGE = 0V, Tj = 25°C 2
Collector-Emitter Breakdown Voltage BVCES 365 435 V IC = 2mA, VGE = 0V, Tj = -40 to 175°C 2
Emitter-Collector Breakdown Voltage BVEC 25 35 V IC = -10mA, VGE = 0V 2
Gate-Emitter Breakdown Voltage BVGES 12 17 V IG = 5mA, VCE = 0V 2
Collector Cut-off Current ICES 7 µA VCE = 250V, VGE = 0V, Tj = 25°C 2
Collector Cut-off Current ICES 100 µA VCE = 250V, VGE = 0V, Tj = 150°C 2
Gate-Emitter Leakage Current IGES 0.6 1.2 mA VGE = 10V, VCE = 0V 2
Gate-Emitter Threshold Voltage VGE(th) 1.3 1.7 2.1 V VCE = 5V, IC = 12mA, Tj = 25°C 2
Gate-Emitter Threshold Voltage VGE(th) 1.3 V VCE = 5V, IC = 12mA, Tj = 150°C 2
Collector-Emitter Saturation Voltage VCE(sat) 1.6 2 V IC = 12A, VGE = 5V, Tj = 25°C 2
Collector-Emitter Saturation Voltage VCE(sat) 1.8 2.1 V IC = 12A, VGE = 5V, Tj = 150°C 2
Collector-Emitter Saturation Voltage VCE(sat) 1.17 1.5 V IC = 5A, VGE = 4.5V, Tj = 25°C 2
Collector-Emitter Saturation Voltage VCE(sat) 1.19 V IC = 5A, VGE = 4.5V, Tj = 150°C 2
Collector-Emitter Saturation Voltage VCE(sat) 1.7 2.1 V IC = 12A, VGE = 4V, Tj = 25°C 3
Collector-Emitter Saturation Voltage VCE(sat) 1.9 V IC = 12A, VGE = 4V, Tj = 150°C 3
Gate-Emitter Resistance RGE 8 16 24 kΩ 3
Gate Series Resistance RG 70 100 130 Ω 3
Avalanche Energy (Single Pulse) EAS 300 mJ L = 5mH, VGE = 5V, VCC = 30V, RG = 1kΩ, Tj = 25°C 3
Avalanche Energy (Single Pulse) EAS 180 mJ L = 5mH, VGE = 5V, VCC = 30V, RG = 1kΩ, Tj = 150°C 3
Turn-on Delay Time td(on) 0.11 0.19 0.5 µs IC = 8A, VCC = 300V, VGE = 5V, RG = 100Ω, L=5mH, Tj=25°C 3
Rise Time tr 0.1 0.18 0.5 µs IC = 8A, VCC = 300V, VGE = 5V, RG = 100Ω, L=5mH, Tj=25°C 3
Turn-off Delay Time td(off) 0.9 1.4 4 µs IC = 8A, VCC = 300V, VGE = 5V, RG = 100Ω, L=5mH, Tj=25°C 3
Fall Time tf 0.8 1.8 5.5 µs IC = 8A, VCC = 300V, VGE = 5V, RG = 100Ω, L=5mH, Tj=25°C 3
Turn-on Delay Time td(on) 0.18 µs IC = 8A, VCC = 300V, VGE = 5V, RG = 100Ω, L=5mH, Tj=150°C 3
Rise Time tr 0.21 µs IC = 8A, VCC = 300V, VGE = 5V, RG = 100Ω, L=5mH, Tj=150°C 3
Turn-off Delay Time td(off) 1.7 µs IC = 8A, VCC = 300V, VGE = 5V, RG = 100Ω, L=5mH, Tj=150°C 3
Fall Time tf 3 µs IC = 8A, VCC = 300V, VGE = 5V, RG = 100Ω, L=5mH, Tj=150°C 3
Total Gate Charge Qg 22 nC VCE = 12V, IC = 10A, VGE = 5V 3
Input Capacitance Cies 1330 pF VCE = 10V, VGE = 0V, f = 1MHz 3
Output Capacitance Coes 220 pF VCE = 10V, VGE = 0V, f = 1MHz 3
Reverse Transfer Capacitance Cres 71 pF VCE = 10V, VGE = 0V, f = 1MHz 3

CAD (KiCad official)

  • Symbol: RGPR30BM40HRTL
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: rgpr30bm40hrtl-etched.step / rgpr30bm40hrtl-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rgpr30bm40hrtl.step / rgpr30bm40hrtl.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (10 pp, sha256 8968e29beac14137, retrieved 2026-10-26, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF