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AON6382
Public Made by Adomby adom
Alpha & Omega Semicon MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAON6382
Alpha & Omega Semicon · MOSFETs · DFN-8(5x6)
AON6382 from Alpha & Omega Semicon, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, tied with pins 2 and 3 to the power return path. |
| 2 | S | passive | Source of the N-channel MOSFET, tied with pins 1 and 3 to the power return path. |
| 3 | S | passive | Source of the N-channel MOSFET, tied with pins 1 and 2 to the power return path. |
| 4 | G | input | Gate of the MOSFET, with a maximum gate-source voltage of ±20V. |
| 5 | D | passive | Drain of the MOSFET, rated for 30V drain-source voltage and connected with pins 6-8. |
| 6 | D | passive | Drain of the MOSFET, rated for 30V drain-source voltage and connected with pins 5, 7 and 8. |
| 7 | D | passive | Drain of the MOSFET, rated for 30V drain-source voltage and connected with pins 5, 6 and 8. |
| 8 | D | passive | Drain of the MOSFET, rated for 30V drain-source voltage and connected with pins 5-7. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha & Omega Semicon |
| Package | DFN-8(5x6) |
| Category | Transistors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate Threshold Voltage | VGS(th) | 1.3 | 1.75 | 2.2 | V | VDS=VGS, ID=250µA | 2 |
| Gate resistance | Rg | 1.1 | 2.3 | 3.5 | Ω | f=1MHz | 2 |
| Gate-Body leakage current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | ID=250µA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=30V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | µA | TJ=55°C | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 1.5 | 1.85 | mΩ | VGS=10V, ID=20A | 2 | |
| Static Drain-Source On-Resistance (TJ=125°C) | RDS(ON) | 2 | 2.45 | mΩ | TJ=125°C, VGS=10V, ID=20A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 2 | 2.5 | mΩ | VGS=4.5V, ID=20A | 2 | |
| Forward Transconductance | gFS | 125 | S | VDS=5V, ID=20A | 2 | ||
| Diode Forward Voltage | VSD | 0.68 | 1 | V | IS=1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 60 | A | 2 | |||
| Input Capacitance | Ciss | 3100 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 875 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 105 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | ||
| Total Gate Charge (10V) | Qg | 43 | 65 | nC | VGS=10V, VDS=15V, ID=20A | 2 | |
| Total Gate Charge (4.5V) | Qg | 20 | 30 | nC | 2 | ||
| Gate Source Charge | Qgs | 8.5 | nC | 2 | |||
| Gate Drain Charge | Qgd | 6 | nC | 2 | |||
| Turn-On DelayTime | tD(on) | 11.5 | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Turn-On Rise Time | tr | 5 | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Turn-Off DelayTime | tD(off) | 40 | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 8 | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Body Diode Reverse Recovery Time | trr | 17 | ns | IF=20A, di/dt=500A/µs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 36 | nC | IF=20A, di/dt=500A/µs | 2 | ||
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Pulsed Drain Current | IDM | 260 | A | Note C: single pulse width limited by TJ(MAX)=150°C | 1 | ||
| Power Dissipation (TA=25°C) | PDSM | 6.2 | W | TA=25°C | 1 | ||
| Power Dissipation (TA=70°C) | PDSM | 4 | W | TA=70°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient (steady-state) | RθJA | 50 | °C/W | Steady-State, device on 1in2 FR-4, still air, TA=25°C | 1 | ||
| Maximum Junction-to-Case (steady-state) | RθJC | 2.5 | °C/W | Steady-State | 1 |
CAD (KiCad official)
- Symbol:
AON6382 - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
aon6382-etched.step/aon6382-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aon6382.step/aon6382.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha & Omega Semicon datasheet (6 pp, sha256
949ededdb0aaa93a, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).