component
DMC2038LVTQ-7
Public Made by Adomby adom
Diodes Incorporated MOSFETs, TSOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownDMC2038LVTQ-7
Diodes Incorporated · MOSFETs · TSOT-23-6
DMC2038LVTQ-7 from Diodes Incorporated, in a TSOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D1 | passive | Drain of the N-channel MOSFET Q1, rated for a drain-source voltage (VDSS) of 20 V. |
| 2 | S1 | passive | Source of the N-channel MOSFET Q1; the device has a gate-source voltage (VGSS) rating of ±12 V. |
| 3 | D2 | passive | Drain of the P-channel MOSFET Q2, rated for a drain-source voltage (VDSS) of -20 V. |
| 4 | G2 | input | Gate of the P-channel MOSFET Q2; the device has a gate-source voltage (VGSS) rating of ±12 V. |
| 5 | S2 | passive | Source of the P-channel MOSFET Q2. |
| 6 | G1 | input | Gate of the N-channel MOSFET Q1; the device has a gate-source voltage (VGSS) rating of ±12 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | TSOT-23-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Q1 N-ch Drain-Source Voltage | VDSS | 20 | V | @TA = +25°C | 2 | ||
| Q1 N-ch Gate-Source Voltage | VGSS | -12 | 12 | V | @TA = +25°C | 2 | |
| Q1 N-ch Continuous Drain Current (Note 6), steady state, TA = +25°C | ID | 3.7 | A | Note 6; VGS = 4.5V; steady state; TA = +25°C | 2 | ||
| Q1 N-ch Continuous Drain Current (Note 6), steady state, TA = +70°C | ID | 3 | A | Note 6; VGS = 4.5V; steady state; TA = +70°C | 2 | ||
| Q1 N-ch Continuous Drain Current (Note 7), steady state, TA = +25°C | ID | 4.5 | A | Note 7; VGS = 4.5V; steady state; TA = +25°C | 2 | ||
| Q1 N-ch Continuous Drain Current (Note 7), steady state, TA = +70°C | ID | 3.6 | A | Note 7; VGS = 4.5V; steady state; TA = +70°C | 2 | ||
| Q1 N-ch Continuous Drain Current (Note 7), t<10s, TA = +25°C | ID | 5.2 | A | Note 7; VGS = 4.5V; t<10s; TA = +25°C | 2 | ||
| Q1 N-ch Continuous Drain Current (Note 7), t<10s, TA = +70°C | ID | 4.2 | A | Note 7; VGS = 4.5V; t<10s; TA = +70°C | 2 | ||
| Q1 N-ch Maximum Continuous Body Diode Forward Current (Note 7) | IS | 1.5 | A | Note 7 | 2 | ||
| Q1 N-ch Pulsed Drain Current | IDM | 25 | A | 10µs pulse, duty cycle = 1% | 2 | ||
| Q2 P-ch Drain-Source Voltage | VDSS | -20 | V | @TA = +25°C | 2 | ||
| Q2 P-ch Gate-Source Voltage | VGSS | -12 | 12 | V | @TA = +25°C | 2 | |
| Q2 P-ch Continuous Drain Current (Note 6), steady state, TA = +25°C | ID | -2.6 | A | Note 6; VGS = -4.5V; steady state; TA = +25°C | 2 | ||
| Q2 P-ch Continuous Drain Current (Note 6), steady state, TA = +70°C | ID | -2.1 | A | Note 6; VGS = -4.5V; steady state; TA = +70°C | 2 | ||
| Q2 P-ch Continuous Drain Current (Note 7), steady state, TA = +25°C | ID | -3.1 | A | Note 7; VGS = -4.5V; steady state; TA = +25°C | 2 | ||
| Q2 P-ch Continuous Drain Current (Note 7), steady state, TA = +70°C | ID | -2.5 | A | Note 7; VGS = -4.5V; steady state; TA = +70°C | 2 | ||
| Q2 P-ch Continuous Drain Current (Note 7), t<10s, TA = +25°C | ID | -3.8 | A | Note 7; VGS = -4.5V; t<10s; TA = +25°C | 2 | ||
| Q2 P-ch Continuous Drain Current (Note 7), t<10s, TA = +70°C | ID | -3 | A | Note 7; VGS = -4.5V; t<10s; TA = +70°C | 2 | ||
| Q2 P-ch Maximum Continuous Body Diode Forward Current (Note 7) | IS | -1.5 | A | Note 7 | 2 | ||
| Q2 P-ch Pulsed Drain Current | IDM | -17 | A | 10µs pulse, duty cycle = 1% | 2 | ||
| Q1 N-ch Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS = 0V, ID = 250μA | 3 | ||
| Q1 N-ch Zero Gate Voltage Drain Current | IDSS | 1 | μA | @TC = +25°C; VDS = 16V, VGS = 0V | 3 | ||
| Q1 N-ch Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±12V, VDS = 0V | 3 | |
| Q1 N-ch Gate Threshold Voltage | VGS(TH) | 0.4 | 1 | V | VDS = VGS, ID = 250μA | 3 | |
| Q1 N-ch Static Drain-Source On-Resistance | RDS(ON) | 27 | 35 | mΩ | VGS = 4.5V, ID = 4.0A | 3 | |
| Q1 N-ch Static Drain-Source On-Resistance | RDS(ON) | 33 | 43 | mΩ | VGS = 2.5V, ID = 2.5A | 3 | |
| Q1 N-ch Static Drain-Source On-Resistance | RDS(ON) | 43 | 56 | mΩ | VGS = 1.8V, ID = 1.5A | 3 | |
| Q1 N-ch Diode Forward Voltage | VSD | 0.4 | 1.1 | V | VGS = 0V, IS = 1A | 3 | |
| Q1 N-ch Input Capacitance | Ciss | 400 | 530 | pF | VDS = 10V, VGS = 0V, f = 1.0MHz | 3 | |
| Q1 N-ch Output Capacitance | Coss | 70 | 90 | pF | VDS = 10V, VGS = 0V, f = 1.0MHz | 3 | |
| Q1 N-ch Reverse Transfer Capacitance | Crss | 65 | 100 | pF | VDS = 10V, VGS = 0V, f = 1.0MHz | 3 | |
| Q1 N-ch Total Gate Charge (VGS = 10V) | Qg | 12 | 17 | nC | VGS = 10V; VDS = 15V, ID = 5.8A | 3 | |
| Q1 N-ch Turn-On Delay Time | tD(ON) | 5 | 10 | ns | VDS = 10V, VGS = 4.5V, RG = 6Ω, IDS = 1A | 3 | |
| Q1 N-ch Turn-On Rise Time | tR | 8 | 16 | ns | VDS = 10V, VGS = 4.5V, RG = 6Ω, IDS = 1A | 3 | |
| Q1 N-ch Turn-Off Delay Time | tD(OFF) | 25 | 40 | ns | VDS = 10V, VGS = 4.5V, RG = 6Ω, IDS = 1A | 3 | |
| Q1 N-ch Turn-Off Fall Time | tF | 8 | 16 | ns | VDS = 10V, VGS = 4.5V, RG = 6Ω, IDS = 1A | 3 | |
| Q2 P-ch Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS = 0V, ID = -250μA | 6 | ||
| Q2 P-ch Zero Gate Voltage Drain Current | IDSS | -1 | μA | @TC = +25°C; VDS = -16V, VGS = 0V | 6 | ||
| Q2 P-ch Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±12V, VDS = 0V | 6 | |
| Q2 P-ch Gate Threshold Voltage | VGS(TH) | -0.4 | -1 | V | VDS = VGS, ID = -250μA | 6 | |
| Q2 P-ch Static Drain-Source On-Resistance | RDS(ON) | 57 | 74 | mΩ | VGS = -4.5V, ID = -3.0A | 6 | |
| Q2 P-ch Static Drain-Source On-Resistance | RDS(ON) | 76 | 110 | mΩ | VGS = -2.5V, ID = -1.5A | 6 | |
| Q2 P-ch Static Drain-Source On-Resistance | RDS(ON) | 102 | 168 | mΩ | VGS = -1.8V, ID = -1.0A | 6 | |
| Q2 P-ch Diode Forward Voltage | VSD | -0.8 | -1 | V | VGS = 0V, IS = -0.6A | 6 | |
| Q2 P-ch Input Capacitance | Ciss | 530 | 705 | pF | VDS = -10V, VGS = 0V, f = 1.0MHz | 6 | |
| Q2 P-ch Output Capacitance | Coss | 70 | 95 | pF | VDS = -10V, VGS = 0V, f = 1.0MHz | 6 | |
| Q2 P-ch Reverse Transfer Capacitance | Crss | 60 | 90 | pF | VDS = -10V, VGS = 0V, f = 1.0MHz | 6 | |
| Q2 P-ch Total Gate Charge (VGS = -4.5V) | Qg | 7 | 10 | nC | VGS = -4.5V; VDS = -15V, ID = -6A | 6 | |
| Q2 P-ch Turn-On Delay Time | tD(ON) | 11 | 20 | ns | VDS = -10V, VGS = -4.5V, RG = 6Ω, IS = -1A | 6 | |
| Q2 P-ch Turn-On Rise Time | tR | 12 | 22 | ns | VDS = -10V, VGS = -4.5V, RG = 6Ω, IS = -1A | 6 | |
| Q2 P-ch Turn-Off Delay Time | tD(OFF) | 21 | 34 | ns | VDS = -10V, VGS = -4.5V, RG = 6Ω, IS = -1A | 6 | |
| Q2 P-ch Turn-Off Fall Time | tF | 13 | 23 | ns | VDS = -10V, VGS = -4.5V, RG = 6Ω, IS = -1A | 6 | |
| Total Power Dissipation (Note 6), TA = +25°C | PD | 0.8 | W | Note 6 (minimum recommended pad layout); TA = +25°C | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 6), steady state | RθJA | 168 | °C/W | Note 6; steady state | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 6), t<10s | RθJA | 120 | °C/W | Note 6; t<10s | 2 | ||
| Total Power Dissipation (Note 7), TA = +25°C | PD | 1.1 | W | Note 7 (1 inch square copper plate); TA = +25°C | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 7), steady state | RθJA | 114 | °C/W | Note 7; steady state | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 7), t<10s | RθJA | 72 | °C/W | Note 7; t<10s | 2 | ||
| Thermal Resistance, Junction to Case (Note 7) | RθJC | 39 | °C/W | Note 7 | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | • Terminals Matte Tin Annealed over Copper Leadframe. | 1 |
CAD (KiCad official)
- Symbol:
DMC2038LVTQ-7 - Footprint:
Package_TO_SOT_SMD:TSOT-23-6 - 3D model: TSOT-23-6 (KiCad packages3D, STEP)
- 3D model files:
dmc2038lvtq-7-etched.step/dmc2038lvtq-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmc2038lvtq-7.step/dmc2038lvtq-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (10 pp, sha256
f94e53961e1a70e9, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).