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Contents

README

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CMP250N03

Cmos · MOSFETs · TO-220

CMP250N03 from Cmos, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate input with an absolute maximum gate-source voltage of ±20 V and a gate threshold voltage of 2 V to 4 V at ID=250 µA.
2 D passive Drain terminal rated for 30 V drain-source voltage and 250 A continuous current at TC=25 °C (180 A at TC=100 °C, 750 A pulsed).
3 S passive Source terminal with a continuous source (body diode) current of 250 A and a diode forward voltage of 1.1 V max at IF=30 A.

Key specifications

Parameter Value
Manufacturer Cmos
Package TO-220
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 25 V VGS=0V , ID=250uA 2
Gate Threshold Voltage VGS(th) 2 4 V VGS=VDS , ID =250uA 2
Drain-Source Leakage Current IDSS 1 mA VDS=24V , VGS=0V 2
Drain-Source Leakage Current (TC=55℃) IDSS 2 mA VDS=24V , VGS=0V ,TC=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS= ±20V , VDS=0V 2
Continuous Source Current IS 250 A VG=VD=0V , Force Current 2
Diode Forward Voltage VSD 1.1 V VGS=0V , IF=30A, TJ=25℃ 2
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 250 A TC=25℃ 1
Continuous Drain Current ID@TC=100℃ 180 A TC=100℃ 1
Pulsed Drain Current IDM 750 A 1
Single Pulse Avalanche Energy EAS 950 mJ 1
Total Power Dissipation PD 200 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 62.5 ℃/W 1
Thermal Resistance Junction-case RθJC 0.48 ℃/W 1
Static Drain-Source On-Resistance RDS(ON) 2 mΩ VGS=10V , ID=30A 2
Forward Transconductance gfs 40 S VDS=10V , ID=30A 2
Gate Resistance Rg 5 Ω VDS=0V , VGS=0V , f=1MHz 2
Total Gate Charge Qg 230 nC 2
Gate-Source Charge Qgs 25 nC 2
Gate-Drain Charge Qgd 60 nC 2
Turn-On Delay Time Td(on) 50 ns 2
Rise Time Tr 110 ns 2
Turn-Off Delay Time Td(off) 90 ns 2
Fall Time Tf 75 ns 2
Input Capacitance Ciss 6100 pF VDS=12.5V , VGS=0V , f=1MHz 2
Output Capacitance Coss 1150 pF VDS=12.5V , VGS=0V , f=1MHz 2
Reverse Transfer Capacitance Crss 730 pF VDS=12.5V , VGS=0V , f=1MHz 2

CAD (KiCad official)

  • Symbol: CMP250N03
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: cmp250n03-etched.step / cmp250n03-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmp250n03.step / cmp250n03.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos datasheet (2 pp, sha256 c2f4ee717edcfb1f, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF