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STC4606

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STANSON Tech MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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STC4606

STANSON Tech · MOSFETs · SOP-8

STC4606 from STANSON Tech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (N-channel, 30V/6.0A continuous ID at TA=25C).
2 G1 input Gate of MOSFET 1 (N-channel), VGSS rating ±12V, threshold 0.8V min to 1.8V max.
3 S2 passive Source of MOSFET 2 (P-channel, -30V/-6.0A continuous ID at TA=25C).
4 G2 input Gate of MOSFET 2 (P-channel), VGSS rating ±20V, threshold -1.0V min to -2.0V max.
5 D2 passive Drain of MOSFET 2 (P-channel), VDSS -30V, pulsed IDM -20A; pins 5 and 6 are tied together.
6 D2 passive Drain of MOSFET 2 (P-channel), VDSS -30V, pulsed IDM -20A; pins 5 and 6 are tied together.
7 D1 passive Drain of MOSFET 1 (N-channel), VDSS 30V, pulsed IDM 23A; pins 7 and 8 are tied together.
8 D1 passive Drain of MOSFET 1 (N-channel), VDSS 30V, pulsed IDM 23A; pins 7 and 8 are tied together.

Key specifications

Parameter Value
Manufacturer STANSON Tech
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-channel) VDSS 30 V 2
Drain-Source Voltage (P-channel) VDSS -30 V 2
Gate-Source Voltage (N-channel) VGSS -12 12 V 2
Gate-Source Voltage (P-channel) VGSS -20 20 V 2
Continuous Drain Current (N-channel) ID 6 A TA=25℃ (TJ=150℃) 2
Continuous Drain Current (P-channel) ID -6 A TA=25℃ (TJ=150℃) 2
Continuous Drain Current (N-channel) ID 4.8 A TA=70℃ 2
Continuous Drain Current (P-channel) ID -4 A TA=70℃ 2
Pulsed Drain Current (N-channel) IDM 23 A 2
Pulsed Drain Current (P-channel) IDM -20 A 2
Continuous Source Current (Diode Conduction) (N-channel) IS 2 A 2
Continuous Source Current (Diode Conduction) (P-channel) IS -2 A 2
Power Dissipation (shared by N and P columns) PD 2 W TA=25℃ 2
Power Dissipation (shared by N and P columns) PD 1.44 W TA=70℃ 2
Operation Junction Temperature TJ 150 ℃ 2
Storage Temperature Range TSTG -55 150 ℃ 2
Thermal Resistance Junction to Ambient RθJA 62.5 ℃/W t ≤ 10 sec 2
Thermal Resistance Junction to Ambient RθJA 110 ℃/W Steady state 2
Drain-Source Breakdown Voltage (N-channel) V(BR)DSS 30 V VGS=0V,ID=250uA 3
Drain-Source Breakdown Voltage (P-channel) V(BR)DSS -30 V VGS=0V,ID=-250uA 3
Gate Threshold Voltage (N-channel) VGS(th) 0.8 1.8 V VDS=VGS,ID=250 uA 3
Gate Threshold Voltage (P-channel) VGS(th) -1 -2 V VDS=VGS,ID=-250uA 3
Gate Leakage Current (N-channel) IGSS -100 100 nA VDS=0V,VGS=±12V 3
Gate Leakage Current (P-channel) IGSS -100 100 nA VDS=0V,VGS=±20V 3
Zero Gate Voltage Drain Current (N-channel) IDSS 1 uA TJ=55℃, VDS=24V,VGS=0V 3
Zero Gate Voltage Drain Current (P-channel) IDSS -1 uA TJ=55℃, VDS=-24V,VGS=0V 3
Zero Gate Voltage Drain Current (N-channel) IDSS 5 uA VDS=24V,VGS=0V 3
Zero Gate Voltage Drain Current (P-channel) IDSS -5 uA VDS=-24V,VGS=0V 3
Drain-source On-Resistance (N-channel) RDS(on) 0.03 0.04 Ω VGS=10V, ID=6.9A 3
Drain-source On-Resistance (P-channel) RDS(on) 0.051 0.06 Ω VGS=-10V,ID=-6.0A 3
Drain-source On-Resistance (N-channel) RDS(on) 0.046 0.055 Ω VGS=4.5V, ID=5.0A 3
Drain-source On-Resistance (P-channel) RDS(on) 0.07 0.082 Ω VGS=-4.5V,ID=-5.0 A 3
Diode Forward Voltage (N-channel) VSD 0.7 1 V IS=1.0A,VGS=0V 3
Diode Forward Voltage (P-channel) VSD -1 -0.7 V IS=-1.7A,VGS=0V 3
Total Gate Charge (N-channel) Qg 13.8 16.6 nC VDS=15V,VGS=10V ID≡6.9A 3
Total Gate Charge (P-channel) Qg 18.5 22.2 nC VDS=-15V,VGS=-10V ID≡5.0A 3
Turn-On Delay Time (N-channel) td(on) 4.6 7 nS VDS=10V,RL=2.2Ω, ID=1A,VGEN=10V, RG=3Ω 3
Turn-On Delay Time (P-channel) td(on) 7.7 11.5 nS VDS=-10V,RL=2.7Ω, ID=-1A,VGEN=-3V, RG=2.7Ω 3
Rise Time (N-channel) tr 4.1 6 nS VDS=10V,RL=2.2Ω, ID=1A,VGEN=10V, RG=3Ω 3
Rise Time (P-channel) tr 5.7 8.5 nS VDS=-10V,RL=2.7Ω, ID=-1A,VGEN=-3V, RG=2.7Ω 3
Turn-Off Delay Time (N-channel) td(off) 20.6 30 nS VDS=10V,RL=2.2Ω, ID=1A,VGEN=10V, RG=3Ω 3
Turn-Off Delay Time (P-channel) td(off) 20.2 30 nS VDS=-10V,RL=2.7Ω, ID=-1A,VGEN=-3V, RG=2.7Ω 3
Fall Time (N-channel) tf 5.2 8 nS VDS=10V,RL=2.2Ω, ID=1A,VGEN=10V, RG=3Ω 3
Fall Time (P-channel) tf 9.5 14 nS VDS=-10V,RL=2.7Ω, ID=-1A,VGEN=-3V, RG=2.7Ω 3

CAD (KiCad official)

  • Symbol: STC4606
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: stc4606-etched.step / stc4606-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stc4606.step / stc4606.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STANSON Tech datasheet (8 pp, sha256 a41d3a7174ce931a, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF