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SI4967DY-T1-E3-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI4967DY-T1-E3-VB
VBsemi Elec · MOSFETs · SO-8
SI4967DY-T1-E3-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of P-channel MOSFET 1 (VDS -20 V, ID -8.9 A at 10 s). |
| 2 | G1 | input | Gate of P-channel MOSFET 1 (VGS ±12 V max, threshold -0.4 to -1.0 V). |
| 3 | S2 | passive | Source of P-channel MOSFET 2 (VDS -20 V, ID -8.9 A at 10 s). |
| 4 | G2 | input | Gate of P-channel MOSFET 2 (VGS ±12 V max, threshold -0.4 to -1.0 V). |
| 5 | D2 | passive | Drain of P-channel MOSFET 2 (pins 5 and 6 are tied together as D2; RDS(on) 0.018 Ω at VGS -4.5 V). |
| 6 | D2 | passive | Drain of P-channel MOSFET 2 (pins 5 and 6 are tied together as D2; RDS(on) 0.018 Ω at VGS -4.5 V). |
| 7 | D1 | passive | Drain of P-channel MOSFET 1 (pins 7 and 8 are tied together as D1; RDS(on) 0.018 Ω at VGS -4.5 V). |
| 8 | D1 | passive | Drain of P-channel MOSFET 1 (pins 7 and 8 are tied together as D1; RDS(on) 0.018 Ω at VGS -4.5 V). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate Threshold Voltage | VGS(th) | -0.4 | -1 | V | VDS = VGS, ID = - 350 µA | 2 | |
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 8 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = - 20 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -5 | µA | VDS = - 20 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | -30 | A | VDS = - 5 V, VGS = - 4.5 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.018 | Ω | VGS = - 4.5 V, ID = - 8.9 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.022 | Ω | VGS = - 2.5 V, ID = - 8.1 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.03 | Ω | VGS = - 1.8 V, ID = - 3.6 A | 2 | ||
| Diode Forward Voltage | VSD | -0.7 | -1.2 | V | IS = - 1.7 A, VGS = 0 V | 2 | |
| Total Gate Charge | Qg | 34.5 | 52 | nC | VDS = - 10 V, VGS = - 4.5 V, ID = - 8.9 A | 2 | |
| Turn-On Delay Time | td(on) | 25 | 40 | ns | VDD = - 10 V, RL = 6 Ω, ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω | 2 | |
| Rise Time | tr | 46 | 70 | ns | VDD = - 10 V, RL = 6 Ω, ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 230 | 345 | ns | VDD = - 10 V, RL = 6 Ω, ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω | 2 | |
| Fall Time | tf | 155 | 235 | ns | VDD = - 10 V, RL = 6 Ω, ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω | 2 | |
| Source-Drain Reverse Recovery Time | trr | 128 | 200 | ns | IF = - 1.7 A, dI/dt = 100 A/µs | 2 | |
| Forward Transconductance | gfs | 26 | S | VDS = - 10 V, ID = - 8.9 A | 2 | ||
| Gate-Source Charge | Qgs | 5.1 | nC | VDS = - 10 V, VGS = - 4.5 V, ID = - 8.9 A | 2 | ||
| Gate-Drain Charge | Qgd | 9.6 | nC | VDS = - 10 V, VGS = - 4.5 V, ID = - 8.9 A | 2 | ||
| Gate Resistance | Rg | 9 | Ω | 2 | |||
| Drain-Source Voltage | VDS | -20 | V | TA = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | TA = 25 °C | 1 | |
| Continuous Drain Current | ID | -8.9 | A | TJ = 150 °C, TA = 25 °C, 10 s | 1 | ||
| Continuous Drain Current | ID | -6.7 | A | TJ = 150 °C, TA = 25 °C, steady state | 1 | ||
| Continuous Drain Current | ID | -7.1 | A | TJ = 150 °C, TA = 70 °C, 10 s | 1 | ||
| Continuous Drain Current | ID | -5.4 | A | TJ = 150 °C, TA = 70 °C, steady state | 1 | ||
| Pulsed Drain Current | IDM | -30 | A | TA = 25 °C | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | -1.7 | A | 10 s | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | -0.9 | A | Steady state | 1 | ||
| Maximum Power Dissipation | PD | 2 | W | TA = 25 °C, 10 s | 1 | ||
| Maximum Power Dissipation | PD | 1.1 | W | TA = 25 °C, steady state | 1 | ||
| Maximum Power Dissipation | PD | 1.3 | W | TA = 70 °C, 10 s | 1 | ||
| Maximum Power Dissipation | PD | 0.7 | W | TA = 70 °C, steady state | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance | RthJA | 46 | 62.5 | °C/W | t ≤ 10 s | 1 | |
| Junction-to-Ambient Thermal Resistance | RthJA | 80 | 110 | °C/W | Steady state | 1 | |
| Junction-to-Foot (Drain) Thermal Resistance | RthJF | 24 | 32 | °C/W | Steady state | 1 |
CAD (KiCad official)
- Symbol:
SI4967DY-T1-E3-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
si4967dy-t1-e3-vb-etched.step/si4967dy-t1-e3-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si4967dy-t1-e3-vb.step/si4967dy-t1-e3-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
88e399916d4802e0, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).