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CS100N03A4-G

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CRMICRO MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorcs100n03a4-gfactory-2.0.0extractor-text

Verified CS100N03A4-G

by Ray · last 31 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

31 Oct 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: CS100N03A4-G · TO-252 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 10-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-252-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-zbecq6mu/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.9)
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ cs100n03a4-g.kicad_sym✓ cs100n03a4-g.kicad_mod✓ cs100n03a4-g.step
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Symbol & Footprint

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Contents

README

markdown

CS100N03A4-G

CRMICRO · MOSFETs · TO-252

CS100N03A4-G from CRMICRO, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-to-source voltage is rated at ±20 V, with a threshold of 0.9 V min to 2.0 V max at ID = 250 µA.
2 D passive Drain; rated at 30 V drain-to-source, with 100 A silicon-limited and 60 A package-limited continuous current at TC = 25 °C.
3 S passive Source; the body diode carries up to 60 A continuous (IS) and 240 A pulsed (ISM).

Key specifications

Parameter Value
Manufacturer CRMICRO
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage VDSS 30 V VGS=0V, ID=250µA 2
Drain to Source Leakage Current IDSS 1 µA VDS=30V, VGS=0V, Tj=25℃ 2
Drain to Source Leakage Current IDSS 100 µA VDS=24V, VGS=0V, Tj=125℃ 2
Gate to Source Forward Leakage IGSS(F) 100 nA VGS=20V 2
Gate to Source Reverse Leakage IGSS(R) -100 nA VGS=-20V 2
Drain-to-Source On-Resistance RDS(ON) 3.3 4.5 mΩ VGS=10V, ID=19A 2
Drain-to-Source On-Resistance RDS(ON) 5.6 7.5 mΩ VGS=4.5V, ID=19A 2
Gate Threshold Voltage VGS(TH) 0.9 1.4 2 V VDS=VGS, ID=250µA 2
Continuous Source Current (Body Diode) IS 60 A TC=25 °C 3
Maximum Pulsed Current (Body Diode) ISM 240 A TC=25 °C 3
Diode Forward Voltage VSD 1.2 V IS=19A, VGS=0V 3
Junction-to-Case Thermal Resistance RθJC 1.62 ℃/W 3
Junction-to-Ambient Thermal Resistance RθJA 64 ℃/W 3
Drain-to-Source Voltage VDSS 30 V Tj=25℃ 1
Continuous Drain Current (Silicon limited) ID 100 A TC=25 °C 1
Continuous Drain Current (Package limited) ID 60 A TC=25 °C 1
Pulsed Drain Current IDM 240 A TC=25 °C 1
Gate-to-Source Voltage VGS -20 20 V 1
Avalanche Energy EAS 196 mJ L=0.5mH, Ias=28A, Start TJ=25℃ 1
Power Dissipation PD 77.1 W TC=25 °C 1
Derating Factor above 25°C 0.617 W/℃ 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ℃ 1
Gate resistance Rg 2.1 Ω VGS=0V, VDS=0V, f=1MHz 2
Input Capacitance Ciss 2442 pF VGS=0V, VDS=15V, f=1.0MHz 2
Output Capacitance Coss 352.5 pF VGS=0V, VDS=15V, f=1.0MHz 2
Reverse Transfer Capacitance Crss 320.8 pF VGS=0V, VDS=15V, f=1.0MHz 2
Turn-on Delay Time td(ON) 12.8 ns VGS=10V, RG=2.5Ω, VDD=15V, ID=19A 2
Rise Time tr 9.2 ns VGS=10V, RG=2.5Ω, VDD=15V, ID=19A 2
Turn-Off Delay Time td(OFF) 54 ns VGS=10V, RG=2.5Ω, VDD=15V, ID=19A 2
Fall Time tf 10.8 ns VGS=10V, RG=2.5Ω, VDD=15V, ID=19A 2
Total Gate Charge Qg 48 nC ID=19A, VDD=15V, VGS=10V 2
Gate to Source Charge Qgs 9.3 nC ID=19A, VDD=15V, VGS=10V 2
Gate to Drain (Miller) Charge Qgd 10.9 nC ID=19A, VDD=15V, VGS=10V 2
Reverse Recovery Time trr 40.36 ns di/dt=100A/us, IF=19A 3
Reverse Recovery Charge Qrr 31.99 nC di/dt=100A/us, IF=19A 3

CAD (KiCad official)

  • Symbol: CS100N03A4-G
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: cs100n03a4-g-etched.step / cs100n03a4-g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cs100n03a4-g.step / cs100n03a4-g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: CRMICRO datasheet (10 pp, sha256 6c1cb06b3cb8b558, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF