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SI3493DDV-T1-GE3

Public Made by Adom

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Vishay Intertech MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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SI3493DDV-T1-GE3

Vishay Intertech · MOSFETs · TSOP-6

SI3493DDV-T1-GE3 from Vishay Intertech, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain of the P-channel MOSFET, rated for VDS of -20 V and shorted to drain pins 2, 5 and 6.
2 D passive Drain of the P-channel MOSFET, rated for VDS of -20 V and shorted to drain pins 1, 5 and 6.
3 G input Gate of the P-channel MOSFET, with a gate-source voltage limit of ±8 V and a threshold of -0.4 V to -1 V.
4 S passive Source of the P-channel MOSFET, with continuous source-drain diode current of -3 A at TC = 25 °C.
5 D passive Drain of the P-channel MOSFET, rated for VDS of -20 V and shorted to drain pins 1, 2 and 6.
6 D passive Drain of the P-channel MOSFET, rated for VDS of -20 V and shorted to drain pins 1, 2 and 5.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package TSOP-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS -20 V 1
Gate-source voltage VGS -8 8 V 1
Continuous drain current ID -8 A TJ = 150 °C, TC = 25 °C 1
Continuous drain current ID -7.5 A TJ = 150 °C, TA = 25 °C 1
Continuous drain current ID -6 A TJ = 150 °C, TA = 70 °C 1
Pulsed drain current IDM -32 A t = 100 μs 1
Continuous source-drain diode current IS -3 A TC = 25 °C 1
Continuous source-drain diode current IS -1.67 A TA = 25 °C 1
Single pulse avalanche current IAS -10 A L = 0.1 mH 1
Single pulse avalanche energy EAS 5 mJ 1
Maximum power dissipation PD 3.6 W TC = 25 °C 1
Maximum power dissipation PD 2.3 W TC = 70 °C 1
Maximum power dissipation PD 2 W TA = 25 °C 1
Maximum power dissipation PD 1.3 W TA = 70 °C 1
Operating junction and storage temperature range TJ, Tstg -55 150 °C 1
Maximum junction-to-ambient RthJA 50 62.5 °C/W t ≤ 5 s 1
Maximum junction-to-ambient RthJA 110 °C/W Steady state (note d) 1
Maximum junction-to-case (drain) RthJC 28 35 °C/W Steady state 1
Drain-source breakdown voltage VDS -20 V VGS = 0 V, ID = -250 μA 2
Gate-source threshold voltage VGS(th) -0.4 -1 V VDS = VGS, ID = -250 μA 2
Gate-source leakage IGSS -100 100 nA VDS = 0 V, VGS = ±8 V 2
Zero gate voltage drain current IDSS -1 μA VDS = -20 V, VGS = 0 V 2
Zero gate voltage drain current IDSS -10 μA VDS = -20 V, VGS = 0 V, TJ = 70 °C 2
On-state drain current ID(on) -20 A VDS -10 V, VGS = -4.5 V 2
Drain-source on-state resistance RDS(on) 0.02 0.024 Ω VGS = -4.5 V, ID = -7.5 A 2
Drain-source on-state resistance RDS(on) 0.0257 0.0321 Ω VGS = -2.5 V, ID = -6.4 A 2
Drain-source on-state resistance RDS(on) 0.0378 0.0511 Ω VGS = -1.8 V, ID = -2 A 2
Total gate charge Qg 34.8 52.2 nC VDS = -10 V, VGS = -8 V, ID = -7.5 A 2
Total gate charge Qg 19.8 30 nC VDS = -10 V, VGS = -4.5 V, ID = -7.5 A 2
Gate resistance Rg 2.12 10.6 21.2 Ω f = 1 MHz 2
Turn-on delay time td(on) 25 38 ns VDD = -10 V, RL = 1.67 Ω, ID -6 A, VGEN = -4.5 V, Rg = 1 Ω 2
Rise time tr 30 45 ns VDD = -10 V, RL = 1.67 Ω, ID -6 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-off delay time td(off) 95 145 ns VDD = -10 V, RL = 1.67 Ω, ID -6 A, VGEN = -4.5 V, Rg = 1 Ω 2
Fall time tf 40 60 ns VDD = -10 V, RL = 1.67 Ω, ID -6 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-on delay time td(on) 8 16 ns VDD = -10 V, RL = 1.67 Ω, ID -6 A, VGEN = -8 V, Rg = 1 Ω 2
Rise time tr 20 30 ns VDD = -10 V, RL = 1.67 Ω, ID -6 A, VGEN = -8 V, Rg = 1 Ω 2
Turn-off delay time td(off) 115 173 ns VDD = -10 V, RL = 1.67 Ω, ID -6 A, VGEN = -8 V, Rg = 1 Ω 2
Continuous source-drain diode current IS -8 A TC = 25 °C 2
Pulse diode forward current ISM -32 A 2
Body diode voltage VSD -0.8 -1.2 V IS = -6 A, VGS = 0 V 2
Body diode reverse recovery time trr 21 32 ns IF = -6 A, dI/dt = 100 A/μs, TJ = 25 °C 2
Body diode reverse recovery charge Qrr 9 18 nC IF = -6 A, dI/dt = 100 A/μs, TJ = 25 °C 2

CAD (KiCad official)

  • Symbol: SI3493DDV-T1-GE3
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: si3493ddv-t1-ge3-etched.step / si3493ddv-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si3493ddv-t1-ge3.step / si3493ddv-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 56eb7b5843a99b0a, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF