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Contents

README

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SI8642BD-AS

Skyworks Solutions · Digital Isolators · SOIC-16

SI8642BD-AS from Skyworks Solutions, in a SOIC-16. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VDD1 power_in Side 1 power supply; requires a 0.1 µF bypass capacitor between VDD1 and GND1, with the Powered state defined as 2.5 V < VDD < 5.5 V.
2 GND1 power_in Side 1 ground.
3 A1 input Side 1 digital input.
4 A2 input Side 1 digital input.
5 A3 bidirectional Side 1 digital input or output.
6 A4 bidirectional Side 1 digital input or output.
7 EN1 input Side 1 active high enable; when disabled the output is driven to high impedance (Hi-Z).
8 GND1 power_in Side 1 ground.
9 GND2 power_in Side 2 ground.
10 EN2 input Side 2 active high enable; when disabled the output is driven to high impedance (Hi-Z).
11 B4 bidirectional Side 2 digital input or output.
12 B3 bidirectional Side 2 digital input or output.
13 B2 output Side 2 digital output.
14 B1 output Side 2 digital output.
15 GND2 power_in Side 2 ground.
16 VDD2 power_in Side 2 power supply; requires a 0.1 µF bypass capacitor between VDD2 and GND2, with the Powered state defined as 2.5 V < VDD < 5.5 V.

Key specifications

Parameter Value
Manufacturer Skyworks Solutions
Package SOIC-16
Category Signal Isolation Devices
Pins 16

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
VDD Undervoltage Threshold (rising) VDDUV+ 1.95 2.24 2.375 V VDD1, VDD2 rising 12
VDD Undervoltage Threshold (falling) VDDUV- 1.88 2.16 2.325 V VDD1, VDD2 falling 12
VDD Undervoltage Hysteresis VDDHYS 50 70 95 mV 12
Positive-Going Input Threshold VT+ 1.4 1.67 1.9 V All inputs rising 12
Negative-Going Input Threshold VT- 1 1.23 1.4 V All inputs falling 12
Input Hysteresis VHYS 0.38 0.44 0.5 V 12
Low Level Input Voltage VIL 0.8 V 12
High Level Input Voltage VIH 2 V 12
Low Level Output Voltage VOL 0.2 0.4 V lol = 4 mA 12
Input Leakage Current (Si864xxA/B/C/D) IL -10 10 µA Si864xxA/B/C/D 12
DC Supply Current VDD1 (VI = 0(Bx), 1(Ex)) 1.8 2.9 mA VDD1, VI = 0(Bx), 1(Ex), all inputs 0 V or at supply; Si8642Bx, Ex 13
DC Supply Current VDD2 (VI = 0(Bx), 1(Ex)) 1.8 2.9 mA VDD2, VI = 0(Bx), 1(Ex), all inputs 0 V or at supply; Si8642Bx, Ex 13
DC Supply Current VDD1 (VI = 1(Bx), 0(Ex)) 4.4 6.6 mA VDD1, VI = 1(Bx), 0(Ex), all inputs 0 V or at supply; Si8642Bx, Ex 13
DC Supply Current VDD2 (VI = 1(Bx), 0(Ex)) 4.4 6.6 mA VDD2, VI = 1(Bx), 0(Ex), all inputs 0 V or at supply; Si8642Bx, Ex 13
1 Mbps Supply Current VDD1 3.3 4.6 mA VDD1, all inputs = 500 kHz square wave, CI = 15 pF; Si8642Bx, Ex 13
1 Mbps Supply Current VDD2 3.3 4.6 mA VDD2, all inputs = 500 kHz square wave, CI = 15 pF; Si8642Bx, Ex 13
10 Mbps Supply Current VDD1 3.9 5.4 mA VDD1, all inputs = 5 MHz square wave, CI = 15 pF; Si8642Bx, Ex 14
10 Mbps Supply Current VDD2 3.9 5.4 mA VDD2, all inputs = 5 MHz square wave, CI = 15 pF; Si8642Bx, Ex 14
100 Mbps Supply Current VDD1 11 14.3 mA VDD1, all inputs = 50 MHz square wave, CI = 15 pF; Si8642Bx, Ex 14
100 Mbps Supply Current VDD2 11 14.3 mA VDD2, all inputs = 50 MHz square wave, CI = 15 pF; Si8642Bx, Ex 14
Maximum Data Rate 0 150 Mbps Si864xBx, Ex 14
Minimum Pulse Width 5 ns 14
Propagation Delay tPHL, tPLH 5 8 13 ns See Figure 4.2 14
Pulse Width Distortion PWD 0.2 4.5 ns /tPLH, tPHL/, See Figure 4.2 14
Propagation Delay Skew tPSK(P-P) 2 4.5 ns 14
Channel-Channel Skew tPSK 0.4 2.5 ns 14
Output Rise Time tr 2.5 4 ns CL = 15 pF 14
Output Fall Time tf 2.5 4 ns CL = 15 pF 15
Common Mode Transient Immunity (Si86xxxA/B/C/D) CMTI 35 50 kV/µs VI = VDD or 0 V, VCM = 1500 V; Si86xxxA/B/C/D 15
Enable to Data Valid ten1 6 11 ns 15
Enable to Data Tri-State ten2 8 12 ns 15
Input power loss to valid default output tSD 8 12 ns 15
Start-up Time tSU 15 40 µs 15
Junction Operating Temperature TJ 150 °C 12
Ambient Operating Temperature TA -40 25 125 °C 12
Supply Voltage VDD1 VDD1 2.375 5.5 V 12
Supply Voltage VDD2 VDD2 2.375 5.5 V 12
Storage Temperature TSTG -65 150 °C 28
Operating Temperature TA -40 125 °C 28
Junction Temperature TJ 150 °C 28
Supply Voltage VDD1, VDD2 -0.5 7 V 28
Input Voltage VI -0.5 V max VDD + 0.5 V 28
Output Voltage VO -0.5 V max VDD + 0.5 V 28
Output Current Drive Channel IO 10 mA 28
Lead Solder Temperature (10 s) 260 °C 10 s 28
Maximum Isolation (Input to Output) (1 sec), NB SOIC-16, QSOP-16 4500 VRMS 1 sec; NB SOIC-16, QSOP-16 28
Maximum Isolation (Input to Output) (1 sec), WB SOIC-16 6500 VRMS 1 sec; WB SOIC-16 28
IC Junction-to-Air Thermal Resistance, WB SOIC-16 θJA 100 °C/W WB SOIC-16 27
IC Junction-to-Air Thermal Resistance, NB SOIC-16/QSOP-16 θJA 105 °C/W NB SOIC-16/QSOP-16 27
High Level Output Voltage VOH 4.8 V loh = -4 mA; min VDD1, VDD2, 0.4 V 12

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing PC 4. Recommended card reflow profile is per the JEDEC/IPC J-STD-020 specification for Small Body Components. 35

CAD (KiCad official)

  • Symbol: SI8642BD-AS
  • Footprint: Package_SO:SOIC-16_3.9x9.9mm_P1.27mm
  • 3D model: SOIC-16 (KiCad packages3D, STEP)
  • 3D model files: si8642bd-as-etched.step / si8642bd-as-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si8642bd-as.step / si8642bd-as.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Skyworks Solutions datasheet (46 pp, sha256 032aeb8b1ade5e14, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF