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Contents

README

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NP4419SR-G

NATLINEAR · MOSFETs · SOP-8

NP4419SR-G from NATLINEAR, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET; pin 1 is marked by the dot, and VDS is rated at -30V.
2 S passive Source of the P-channel MOSFET, tied with the other source pins; VDS is rated at -30V.
3 S passive Source of the P-channel MOSFET, tied with the other source pins; VDS is rated at -30V.
4 G input Gate of the P-channel MOSFET with a VGS rating of ±20V and a threshold VGS(th) of -1.00V to -3.0V.
5 D passive Drain of the P-channel MOSFET, tied with the other drain pins; continuous ID is -9.0A and pulsed IDM is -40A.
6 D passive Drain of the P-channel MOSFET, tied with the other drain pins; continuous ID is -9.0A and pulsed IDM is -40A.
7 D passive Drain of the P-channel MOSFET, tied with the other drain pins; continuous ID is -9.0A and pulsed IDM is -40A.
8 D passive Drain of the P-channel MOSFET, tied with the other drain pins; continuous ID is -9.0A and pulsed IDM is -40A.

Key specifications

Parameter Value
Manufacturer NATLINEAR
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage BVDSS -30 V VGS=0V, ID=-250µA 2
Zero gate voltage drain current IDSS -1 µA VDS=-30V, VGS=0V 2
Gate-body leakage IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate threshold voltage VGS(th) -1 -1.67 -3 V VDS=VGS, ID=-250µA 2
Drain-source on-state resistance RDS(ON) 16 22 mΩ VGS=10V, ID=-9A 2
Drain-source on-state resistance RDS(ON) 21 28 mΩ VGS=4.5V, ID=-7A 2
Input capacitance CISS 1040 1250 pF VDS=-15V, VGS=0V, f=1.0MHz 2
Reverse transfer capacitance CRSS 125 175 pF VDS=-15V, VGS=0V, f=1.0MHz 2
Diode forward voltage VSD -0.75 -1 V VGS=0V, Is=-1.0A 2
Thermal resistance junction-to-ambient Rth JA 90 ℃/W 2
Drain-source voltage VDS -30 V TA=25℃ 1
Gate-source voltage VGS -20 20 V TA=25℃ 1
Drain current-continuous ID -9 A @Tj=125℃ 1
Drain current-pulse IDM -40 A 1
Drain-source diode forward current Is -2.5 A 1
Maximum power dissipation PD 1.5 W 1
Operating junction temperature range Tj -55 150 ℃ 1
Storage temperature -55 150 °C Ordering information 1
Output capacitance COSS 180 pF VDS=-15V, VGS=0V, f=1.0MHz 2
Forward transconductance gfs 24 S VGS=-5V, ID=-9A 2
Turn-on delay time tD(ON) 10 ns VDS=-15V, RL=2.2, VGS=-10V, RGEN=3 2
Rise time tr 5.5 ns VDS=-15V, RL=2.2, VGS=-10V, RGEN=3 2
Turn-off delay time tD(OFF) 26 ns VDS=-15V, RL=2.2, VGS=-10V, RGEN=3 2
Fall time tf 9 ns VDS=-15V, RL=2.2, VGS=-10V, RGEN=3 2
Total gate charge Qg(10V) 19 nC VDS=-15V, ID=-9A, VGS=-10V 2
Total gate charge Qg(4.5V) 9.6 nC VDS=-15V, ID=-9A 2
Gate-source charge Qgs 3.6 nC VDS=-15V, ID=-9A, VGS=-10V 2
Gate-drain charge Qgd 4.6 nC VDS=-15V, ID=-9A, VGS=-10V 2

CAD (KiCad official)

  • Symbol: NP4419SR-G
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: np4419sr-g-etched.step / np4419sr-g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); np4419sr-g.step / np4419sr-g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: NATLINEAR datasheet (8 pp, sha256 f5ca0dc8b4515b56, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF