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Contents

README

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ZXTN19100CZTA

Diodes Incorporated · Bipolar (BJT) · SOT-89

ZXTN19100CZTA from Diodes Incorporated, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; the datasheet pin-out shows it as the bottom lead in top view, with VEBO max 7 V and IB max 1 A.
2 C passive Collector lead, in the middle of the three leads and tied to the collector tab; VCEO 100 V, IC 5.25 A continuous, ICM 10 A peak.
3 E passive Emitter of the NPN transistor; the datasheet pin-out shows it as the top lead in top view.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 200 V 2
Collector-Emitter Voltage (forward blocking) VCEX 200 V 2
Collector-Emitter Voltage VCEO 100 V 2
Emitter-Collector voltage (reverse blocking) VECX 6 V 2
Emitter-Base Voltage VEBO 7 V 2
Continuous Collector Current IC 5.25 A Note 5 2
Base current IB 1 A 2
Peak Pulse Collector Current ICM 10 A Single pulse 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Power Dissipation (Note 5) PD 1.1 W Note 5: 15mm x 15mm x 0.6mm FR4, 1oz Cu, still air, steady state 2
Power Dissipation (Note 6) PD 1.8 W Note 6: 25mm x 25mm x 0.6mm FR4, 1oz Cu, still air, steady state 2
Power Dissipation (Note 7) PD 2.4 W Note 7: 50mm x 50mm x 0.6mm FR4, 1oz Cu, still air, steady state 2
Power Dissipation (Note 8) PD 4.46 W Note 8: Note 5 board, t<5 seconds 2
Power Dissipation (Note 9) PD 26.6 W Note 9: junction to case (collector tab), typical 2
Thermal Resistance, Junction to Ambient (Note 5) RθJA 117 °C/W Note 5: 15mm x 15mm x 0.6mm FR4, 1oz Cu, still air, steady state 2
Thermal Resistance, Junction to Ambient (Note 6) RθJA 68 °C/W Note 6: 25mm x 25mm x 0.6mm FR4, 1oz Cu, still air, steady state 2
Thermal Resistance, Junction to Ambient (Note 7) RθJA 51 °C/W Note 7: 50mm x 50mm x 0.6mm FR4, 1oz Cu, still air, steady state 2
Thermal Resistance, Junction to Ambient (Note 8) RθJA 28 °C/W Note 8: Note 5 board, t<5 seconds 2
Thermal Resistance, Junction to Case (Note 9) RθJC 4.69 °C/W Note 9: junction to case (collector tab), typical 2
Collector-Base Breakdown Voltage BVCBO 200 240 V IC = 100μA 5
Collector-Emitter breakdown voltage (forward blocking) BVCEX 200 240 V IC = 100µA, RBE ≤ 1kΩ or -1V < VBE < 0.25V 5
Collector-Emitter Breakdown Voltage BVCEO 100 120 V IC = 10mA 5
Emitter-Collector breakdown voltage (reverse blocking) BVECX 6 8.3 V IE = 100μA, RBC ≤ 1kΩ or 0.25V > VBC > -0.25V 5
Emitter-Collector breakdown voltage (reverse blocking) BVECO 5 8 V IE = 100µA 5
Emitter-Base Breakdown Voltage BVEBO 7 8.3 V IE = 100µA 5
Collector Base Cutoff Current ICBO 1 50 nA VCB = 200V 5
Collector Base Cutoff Current ICBO 0.5 µA VCB = 200V, TA = +100°C 5
Collector Emitter Cutoff Current ICEX 100 nA VCE = 200V, RBE ≤ 1kΩ or -1V < VBE < 0.25V 5
Emitter Cutoff Current IEBO 1 50 nA VEB = 5.6V 5
Collector-Emitter Saturation Voltage VCE(sat) 50 65 mV IC = 1A, IB = 100mA 5
Collector-Emitter Saturation Voltage VCE(sat) 105 140 mV IC = 1A, IB = 20mA 5
Collector-Emitter Saturation Voltage VCE(sat) 210 350 mV IC = 5.25A, IB = 525mA 5
Base-Emitter Saturation Voltage VBE(sat) 1000 1075 mV IC = 5.25A, IB = 525mA 5
Base-Emitter Turn-On Voltage VBE(on) 930 1025 mV IC = 5.25A, VCE = 2V 5
DC current gain hFE 200 IC = 100mA, VCE = 2V 5
DC current gain hFE 130 IC = 1A, VCE = 2V 5
DC current gain hFE 30 IC = 5.25A, VCE = 2V 5
Input Capacitance Cibo 305 400 pF VEB = 0.5V, f = 1MHz 5
Output Capacitance Cobo 15.7 25 pF VCB = 10V, f = 1MHz 5

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin • Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: ZXTN19100CZTA
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: zxtn19100czta-etched.step / zxtn19100czta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); zxtn19100czta.step / zxtn19100czta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (8 pp, sha256 4c4927ab5df09dda, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF