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Contents

README

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RZF020P01TL

ROHM Semicon · MOSFETs · SOT-323

RZF020P01TL from ROHM Semicon, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal with built-in G-S protection diode; gate-source voltage limited to ±10 V and drivable from 1.5 V.
2 Source passive Source terminal of the P-channel MOSFET; body diode continuous forward current is -0.6 A.
3 Drain passive Drain terminal with drain-source voltage of -12 V and continuous drain current of ±2 A.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain - Source voltage VDSS -12 V 1
Continuous drain current ID -2 2 A 1
Pulsed drain current IDP -6 6 A Pw≦10μs, Duty cycle≦1% (*1) 1
Gate - Source voltage VGSS -10 10 V 1
Power dissipation PD 0.8 W Mounted on a ceramic board (30x30x0.8mm) (*2) 1
Power dissipation PD 0.75 W Mounted on a FR4 (25×25×0.8mm) (*3) 1
Junction temperature Tj 150 ℃ 1
Operating junction and storage temperature range Tstg -55 150 ℃ 1
Thermal resistance, junction - ambient RthJA 156 ℃/W Mounted on a ceramic board (30x30x0.8mm) (*2) 2
Thermal resistance, junction - ambient RthJA 167 ℃/W Mounted on a FR4 (25×25×0.8mm) (*3) 2
Drain - Source breakdown voltage V(BR)DSS -12 V VGS = 0V, ID = -1mA 2
Zero gate voltage drain current IDSS -1 μA VDS = -12V, VGS = 0V 2
Gate - Source leakage current IGSS -10 10 μA VGS = ±10V, VDS = 0V 2
Gate threshold voltage VGS(th) -0.3 -1 V VDS = -6V, ID = -1mA 2
Static drain - source on - state resistance RDS(on) 75 105 mΩ VGS = -4.5V, ID = -2A, pulsed (*4) 2
Static drain - source on - state resistance RDS(on) 105 145 mΩ VGS = -2.5V, ID = -1A, pulsed (*4) 2
Static drain - source on - state resistance RDS(on) 150 225 mΩ VGS = -1.8V, ID = -1A, pulsed (*4) 2
Static drain - source on - state resistance RDS(on) 200 400 mΩ VGS = -1.5V, ID = -0.4A, pulsed (*4) 2
Forward transfer admittance /Yfs/ 2 S VDS = -6V, ID = -2A, pulsed (*4) 2
Continuous forward current (body diode) IS -0.6 A Ta = 25℃ 3
Pulse forward current (body diode) ISP -6 A Pw≦10μs, Duty cycle≦1% (*1) 3
Forward voltage (body diode) VSD -1.2 V VGS = 0V, IS = -2A, pulsed (*4) 3

CAD (KiCad official)

  • Symbol: RZF020P01TL
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: rzf020p01tl-etched.step / rzf020p01tl-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rzf020p01tl.step / rzf020p01tl.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (14 pp, sha256 2262405239f552b0, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF