Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

SMMBD914LT1G

onsemi · Switching Diodes · SOT-23

SMMBD914LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 ANODE passive Diode anode terminal (STYLE 8, pin 1 ANODE); the device is rated for 100 Vdc reverse voltage and 200 mAdc forward current.
2 NC unconnected No connection (STYLE 8, pin 2 NO CONNECTION) on this 3-lead SOT-23 package.
3 CATHODE passive Diode cathode terminal (STYLE 8, pin 3 CATHODE); the device is rated for 100 Vdc reverse voltage and 200 mAdc forward current.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Diodes
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse Voltage Leakage Current (VR = 20 Vdc) IR 25 nAdc VR = 20 Vdc 2
Reverse Voltage Leakage Current (VR = 75 Vdc) IR 5 Adc VR = 75 Vdc 2
Diode Capacitance CT 4 pF VR = 0, f = 1.0 MHz 2
Forward Voltage VF 1 Vdc IF = 10 mAdc 2
Reverse Recovery Time trr 4 ns IF = IR = 10 mAdc (Figure 1) 2
Reverse Breakdown Voltage V(BR) 100 Vdc IR = 100 Adc 2
Reverse Voltage VR 100 Vdc 1
Forward Current IF 200 mAdc 1
Peak Forward Surge Current IFM(surge) 500 mAdc 1
Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Total Device Dissipation, FR-5 Board (Note 1), TA = 25°C PD 225 mW FR-5 board, TA = 25°C 1
Thermal Resistance, Junction-to-Ambient, FR-5 Board RJA 556 °C/W FR-5 board (Note 1) 1
Total Device Dissipation, Alumina Substrate (Note 2), TA = 25°C PD 300 mW Alumina substrate (Note 2), TA = 25°C 1
Thermal Resistance, Junction-to-Ambient, Alumina Substrate RJA 417 °C/W Alumina substrate (Note 2) 1

CAD (KiCad official)

  • Symbol: SMMBD914LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: smmbd914lt1g-etched.step / smmbd914lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); smmbd914lt1g.step / smmbd914lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (4 pp, sha256 93918419f3183d5a, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF