component
FDS8884
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UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFDS8884
UMW · MOSFETs · SOP-8
FDS8884 from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal (pins 1, 2 and 3 are all SOURCE); the source is the reference for the ±20 V gate-to-source rating (VGS). |
| 2 | S | passive | Source terminal (pins 1, 2 and 3 are all SOURCE); the source is the reference for the ±20 V gate-to-source rating (VGS). |
| 3 | S | passive | Source terminal (pins 1, 2 and 3 are all SOURCE); the source is the reference for the ±20 V gate-to-source rating (VGS). |
| 4 | G | input | Gate terminal; gate-to-source voltage is rated at ±20 V (VGS), with the gate threshold VGS(th) of 1.2 to 2.5 V. |
| 5 | D | passive | Drain terminal (pins 5, 6, 7 and 8 are all DRAIN); the device is rated 30 V drain-to-source (VDS) and 8.5 A continuous drain current (ID). |
| 6 | D | passive | Drain terminal (pins 5, 6, 7 and 8 are all DRAIN); the device is rated 30 V drain-to-source (VDS) and 8.5 A continuous drain current (ID). |
| 7 | D | passive | Drain terminal (pins 5, 6, 7 and 8 are all DRAIN); the device is rated 30 V drain-to-source (VDS) and 8.5 A continuous drain current (ID). |
| 8 | D | passive | Drain terminal (pins 5, 6, 7 and 8 are all DRAIN); the device is rated 30 V drain-to-source (VDS) and 8.5 A continuous drain current (ID). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | ID=250µA, VGS=0V | 3 | ||
| Gate to Source Threshold Voltage | VGS(th) | 1.2 | 1.7 | 2.5 | V | VDS=VGS, ID=250µA | 3 |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=24V, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current (second max value) | IDSS | 250 | µA | VDS=24V, VGS=0V | 3 | ||
| Gate to Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V | 3 | |
| Drain to Source On Resistance | RDS(ON) | 19 | 23 | mΩ | VGS=10V, ID=8.5A | 3 | |
| Drain to Source On Resistance | RDS(ON) | 26 | 30 | mΩ | VGS=4.5V, ID=7.5A | 3 | |
| Drain to Source On Resistance | RDS(ON) | 32 | mΩ | VGS=10V,ID=8.5A,TJ=125°C | 3 | ||
| Input Capacitance | Ciss | 475 | 635 | pF | VDS=15V, VGS=0V, f=1MHz | 3 | |
| Output Capacitance | Coss | 100 | 135 | pF | VDS=15V, VGS=0V, f=1MHz | 3 | |
| Reverse Transfer Capacitance | Crss | 65 | 100 | pF | VDS=15V, VGS=0V, f=1MHz | 3 | |
| Gate Resistance | RG | 0.9 | 1.6 | Ω | f=1MHz | 3 | |
| Turn-On Delay Time | tD(on) | 5 | 10 | ns | VDD=15V, ID=8.5A, VGS=10V, RGS=33Ω | 3 | |
| Rise Time | tr | 9 | 18 | ns | VDD=15V, ID=8.5A, VGS=10V, RGS=33Ω | 3 | |
| Turn-Off Delay Time | tD(off) | 42 | 68 | ns | VDD=15V, ID=8.5A, VGS=10V, RGS=33Ω | 3 | |
| Fall Time | tf | 21 | 34 | ns | VDD=15V, ID=8.5A, VGS=10V, RGS=33Ω | 3 | |
| Total Gate Charge | Qg | 9.2 | 13 | nC | VDS=15V,ID=8.5A,VGS=10V | 3 | |
| Total Gate Charge | Qg | 5 | 7 | nC | VDS=15V, ID=8.5A, VGS=5V | 3 | |
| Gate to Source Gate Charge | Qgs | 1.5 | nC | 3 | |||
| Gate to Drain Charge | Qgd | 2 | nC | 3 | |||
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | 23 | mV/°C | ID=250µA, Referenced to 25°C | 3 | ||
| Gate to Source Threshold Voltage Temperature Coefficient | ΔVGS(th)/ΔTJ | -4.9 | mV/°C | ID=250µA, Referenced to 25°C | 3 | ||
| Reverse Recovery Time | trr | 33 | nS | IF=8.5A, dIF/dt=100A/μs | 4 | ||
| Reverse Recovery Charge | Qrr | 20 | nC | IF=8.5A, dIF/dt=100A/μs | 4 | ||
| Drain to Source Voltage | VDS | 30 | V | 1 | |||
| Gate to Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current Continuous | ID | 8.5 | A | 1 | |||
| Drain Current Pulsed | IDM | 40 | A | Note 1a | 1 | ||
| Single Pulse Avalanche Energy | EAS | 32 | mJ | Note 2: Starting TJ=25°C, L=1mH, IAS=8A, VDD=27V, VGS=10V | 1 | ||
| Power Dissipation | PD | 2.5 | W | 1 | |||
| Power Dissipation Derate above 25°C | PD derate | 20 | °C/W | Above 25°C | 1 | ||
| Operating Junction and Storage Temperature | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 50 | °C/W | Note 1a: 1 in² pad of 2 oz copper | 2 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 25 | °C/W | Note 1 | 2 |
CAD (KiCad official)
- Symbol:
FDS8884 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
fds8884-etched.step/fds8884-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fds8884.step/fds8884.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (10 pp, sha256
9427bf3c039cf4b6, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).