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2SK3576-T1B-A-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown2SK3576-T1B-A-VB
VBsemi Elec · MOSFETs · SOT-23(TO-236)
2SK3576-T1B-A-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±12 V (VGS(th) 0.45 to 1.0 V at ID = 250 µA). |
| 2 | S | passive | Source; continuous source-drain body diode current is 1.75 A at TC = 25 °C. |
| 3 | D | passive | Drain; drain-source voltage is 20 V maximum, pulsed drain current IDM is 20 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | TA = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | TA = 25 °C | 1 | |
| Continuous Drain Current | ID | 6 | A | TC = 25 °C, TJ = 150 °C | 1 | ||
| Continuous Drain Current | ID | 5.1 | A | TC = 70 °C, TJ = 150 °C | 1 | ||
| Pulsed Drain Current | IDM | 20 | A | TA = 25 °C | 1 | ||
| Continuous Source-Drain Diode Current | IS | 1.75 | A | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 2.1 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.3 | W | TC = 70 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering Peak Temperature | 260 | °C | Soldering recommendations | 1 | |||
| Junction-to-Ambient Thermal Resistance | RthJA | 80 | 100 | °C/W | t ≤ 5 s | 1 | |
| Junction-to-Foot (Drain) Thermal Resistance | RthJF | 40 | 60 | °C/W | Steady State | 1 | |
| Drain-Source Breakdown Voltage | VDS | 20 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 0.45 | 1 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 8 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 20 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 20 V, VGS = 0 V, TJ = 70 °C | 2 | ||
| On-State Drain Current | ID(on) | 20 | A | VDS ≤ 5 V, VGS = 4.5 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.022 | Ω | VGS = 4.5 V, ID = 5.0 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.028 | Ω | VGS = 2.5 V, ID = 4.7 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.039 | Ω | VGS = 1.8 V, ID = 4.3 A | 2 | ||
| Total Gate Charge | Qg | 12 | 18 | nC | VDS = 10 V, VGS = 5 V, ID = 5.0 A | 2 | |
| Total Gate Charge | Qg | 8.8 | 14 | nC | VDS = 10 V, VGS = 4.5 V, ID = 5.0 A | 2 | |
| Gate Resistance | Rg | 0.5 | 2.4 | 4.8 | Ω | f = 1 MHz | 2 |
| Rise Time | tr | 17 | 26 | ns | VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 31 | 47 | ns | VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 13 | 20 | ns | VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 5 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 21 | 32 | ns | VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 5 V, Rg = 1 Ω | 2 | |
| Continuous Source-Drain Diode Current | IS | 1.75 | A | TC = 25 °C | 2 | ||
| Pulse Diode Forward Current | ISM | 20 | A | 2 | |||
| Body Diode Voltage | VSD | 0.75 | 1.2 | V | IS = 4 A, VGS = 0 V | 2 | |
| Body Diode Reverse Recovery Time | trr | 12 | 20 | ns | IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| VDS Temperature Coefficient | ΔVDS/TJ | 25 | mV/°C | ID = 250 µA | 2 | ||
| VGS(th) Temperature Coefficient | ΔVGS(th)/TJ | -2.6 | mV/°C | ID = 250 µA | 2 | ||
| Forward Transconductance | gfs | 24 | S | VDS = 10 V, ID = 5.0 A | 2 | ||
| Input Capacitance | Ciss | 865 | pF | VDS = 10 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 105 | pF | VDS = 10 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 55 | pF | VDS = 10 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Gate-Source Charge | Qgs | 1.1 | nC | VDS = 10 V, VGS = 4.5 V, ID = 5.0 A | 2 | ||
| Gate-Drain Charge | Qgd | 0.7 | nC | VDS = 10 V, VGS = 4.5 V, ID = 5.0 A | 2 |
CAD (KiCad official)
- Symbol:
2SK3576-T1B-A-VB - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files:
2sk3576-t1b-a-vb-etched.step/2sk3576-t1b-a-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sk3576-t1b-a-vb.step/2sk3576-t1b-a-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
8b32fcb2d2ca5f52, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).