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NCE3095G
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Wuxi NCE Power Semiconductor MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNCE3095G
Wuxi NCE Power Semiconductor · MOSFETs · DFN5x6-8L
NCE3095G from Wuxi NCE Power Semiconductor, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET (pin 1 of the source group S1-S3); drain-source voltage limit 30 V. |
| 2 | S | passive | Source of the N-channel MOSFET (pin 2 of the source group S1-S3); continuous drain current 95 A at TC=25°C. |
| 3 | S | passive | Source of the N-channel MOSFET (pin 3 of the source group S1-S3); pulsed drain current up to 300 A. |
| 4 | G | input | Gate of the N-channel MOSFET with a gate-source voltage limit of ±20 V and a threshold of 1 V min to 2.5 V max at 250 µA. |
| 5 | D | passive | Drain of the MOSFET (pin 5 of the drain group D5-D8, connected to the exposed drain pad); drain-source voltage limit 30 V. |
| 6 | D | passive | Drain of the MOSFET (pin 6 of the drain group D5-D8, connected to the exposed drain pad); continuous drain current 95 A. |
| 7 | D | passive | Drain of the MOSFET (pin 7 of the drain group D5-D8, connected to the exposed drain pad); pulsed drain current up to 300 A. |
| 8 | D | passive | Drain of the MOSFET (pin 8 of the drain group D5-D8, connected to the exposed drain pad); RDS(ON) 4.1 mΩ typical at VGS=10 V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | DFN5x6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25℃ | 1 | |
| Drain Current-Continuous | ID | 95 | A | TC=25℃ | 1 | ||
| Drain Current-Continuous | ID (100℃) | 63.6 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 300 | A | TC=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 80 | W | TC=25℃ | 1 | ||
| Single pulse avalanche energy | EAS | 150 | mJ | Note 5: Tj=25℃, VDD=15V, VG=10V, L=0.1mH, Rg=25Ω | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 1.56 | ℃/W | Note 2: Surface Mounted on FR4 Board, t ≤ 10 sec | 1 | ||
| Derating factor | 0.64 | W/℃ | 1 | ||||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 4.1 | 5.1 | mΩ | VGS=10V, ID=20A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 5.5 | 8.5 | mΩ | VGS=4.5V, ID=20A | 2 | |
| Forward Transconductance | gFS | 30 | S | VDS=5V,ID=20A | 2 | ||
| Diode Forward Voltage | VSD | 0.85 | 1.2 | V | VGS=0V,IS=20A | 2 | |
| Diode Forward Current | IS | 95 | A | Note 2 | 2 | ||
| Reverse Recovery Time | trr | 47 | nS | 2 | |||
| Reverse Recovery Charge | Qrr | 25 | nC | TJ = 25°C, IF = 20A, di/dt = 100A/μs (Note3) | 2 |
CAD (KiCad official)
- Symbol:
NCE3095G - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files:
nce3095g-etched.step/nce3095g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nce3095g.step/nce3095g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
e4cfaa00cd06990e, retrieved 2026-10-10, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).