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IPD60R145CFD7
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIPD60R145CFD7
Infineon Technologies · MOSFETs · TO-252
IPD60R145CFD7 from Infineon Technologies, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the MOSFET, with static gate-source voltage limited to ±20 V (±30 V dynamic AC) and a typical threshold of 4 V. |
| 2 | Drain | passive | Drain terminal, also connected to the tab, rated for 600 V minimum breakdown (VGS=0 V, ID=1 mA) and 16 A continuous at TC=25°C. |
| 3 | Source | passive | Source terminal with internal body diode, rated for 16 A continuous diode forward current at TC=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | 16 | A | TC=25°C | 3 | ||
| Continuous drain current | ID | 10 | A | TC=100°C | 3 | ||
| Pulsed drain current | ID,pulse | 58 | A | TC=25°C | 3 | ||
| Avalanche energy, single pulse | EAS | 68 | mJ | ID=4.1A; VDD=50V | 3 | ||
| Avalanche energy, repetitive | EAR | 0.34 | mJ | ID=4.1A; VDD=50V | 3 | ||
| Avalanche current, single pulse | IAS | 4.1 | A | 3 | |||
| MOSFET dv/dt ruggedness | dv/dt | 120 | V/ns | VDS=0...400V | 3 | ||
| Gate source voltage (static) | VGS | -20 | 20 | V | static | 3 | |
| Gate source voltage (dynamic) | VGS | -30 | 30 | V | AC (f>1 Hz) | 3 | |
| Power dissipation | Ptot | 83 | W | TC=25°C | 3 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 3 | ||
| Operating junction temperature | Tj | -55 | 150 | °C | 3 | ||
| Continuous diode forward current | IS | 16 | A | TC=25°C | 3 | ||
| Diode pulse current | IS,pulse | 58 | A | TC=25°C | 3 | ||
| Reverse diode dv/dt | dv/dt | 70 | V/ns | VDS=0...400V,ISD<=16A,Tj=25°C | 3 | ||
| Maximum diode commutation speed | diF/dt | 1300 | A/µs | VDS=0...400V,ISD<=16A,Tj=25°C | 3 | ||
| Thermal resistance, junction - case | RthJC | 1.51 | °C/W | 4 | |||
| Thermal resistance, junction - ambient | RthJA | 62 | °C/W | device on PCB, minimal footprint | 4 | ||
| Thermal resistance, junction - ambient for SMD version | RthJA | 35 | 45 | °C/W | Device on 40mm40mm1.5mm epoxy PCB FR4 with 6cm² copper area for drain connection and cooling | 4 | |
| Soldering temperature | Tsold | 260 | °C | reflow MSL1 | 4 | ||
| Drain-source breakdown voltage | V(BR)DSS | 600 | V | VGS=0V,ID=1mA | 5 | ||
| Gate threshold voltage | V(GS)th | 3.5 | 4 | 4.5 | V | VDS=VGS,ID=0.34mA | 5 |
| Zero gate voltage drain current | IDSS | 7 | 37 | µA | VDS=600V,VGS=0V,Tj=25°C | 5 | |
| Zero gate voltage drain current | IDSS | 1 | µA | VDS=600V,VGS=0V,Tj=125°C | 5 | ||
| Gate-source leakage current | IGSS | 100 | nA | VGS=20V,VDS=0V | 5 | ||
| Drain-source on-state resistance | RDS(on) | 0.127 | 0.145 | Ω | VGS=10V,ID=6.8A,Tj=25°C | 5 | |
| Drain-source on-state resistance | RDS(on) | 0.29 | Ω | VGS=10V,ID=6.8A,Tj=150°C | 5 | ||
| Gate resistance | RG | 10 | Ω | f=1MHz,open drain | 5 | ||
| Input capacitance | Ciss | 1330 | pF | VGS=0V,VDS=400V,f=250kHz | 5 | ||
| Output capacitance | Coss | 24 | pF | VGS=0V,VDS=400V,f=250kHz | 5 | ||
| Effective output capacitance, energy related | Co(er) | 44 | pF | VGS=0V,VDS=0...400V | 5 | ||
| Effective output capacitance, time related | Co(tr) | 453 | pF | ID=constant,VGS=0V,VDS=0...400V | 5 | ||
| Turn-on delay time | td(on) | 27 | ns | VDD=400V,VGS=10V,ID=7.3A,RG=5.3Ω | 5 | ||
| Rise time | tr | 18 | ns | VDD=400V,VGS=10V,ID=7.3A,RG=5.3Ω | 5 | ||
| Turn-off delay time | td(off) | 71 | ns | VDD=400V,VGS=10V,ID=7.3A,RG=5.3Ω | 5 | ||
| Fall time | tf | 7.2 | ns | VDD=400V,VGS=10V,ID=7.3A,RG=5.3Ω | 5 | ||
| Gate to source charge | Qgs | 8 | nC | VDD=400V,ID=7.3A,VGS=0to10V | 5 | ||
| Gate to drain charge | Qgd | 10 | nC | VDD=400V,ID=7.3A,VGS=0to10V | 5 | ||
| Gate charge total | Qg | 31 | nC | VDD=400V,ID=7.3A,VGS=0to10V | 5 | ||
| Gate plateau voltage | Vplateau | 5.7 | V | VDD=400V,ID=7.3A,VGS=0to10V | 5 | ||
| Diode forward voltage | VSD | 1 | V | VGS=0V,IF=6.8A,Tj=25°C | 6 | ||
| Reverse recovery time | trr | 102 | 153 | ns | VR=400V,IF=7.3A,diF/dt=100A/µs | 6 | |
| Reverse recovery charge | Qrr | 0.45 | 0.9 | µC | VR=400V,IF=7.3A,diF/dt=100A/µs | 6 | |
| Peak reverse recovery current | Irrm | 8 | A | VR=400V,IF=7.3A,diF/dt=100A/µs | 6 |
CAD (KiCad official)
- Symbol:
IPD60R145CFD7 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
ipd60r145cfd7-etched.step/ipd60r145cfd7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipd60r145cfd7.step/ipd60r145cfd7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (14 pp, sha256
cb6a0ced3ceea987, retrieved 2026-10-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).