component
VBI2202K
Public Made by Adomby adom
VBsemi Elec MOSFETs, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownVBI2202K
VBsemi Elec · MOSFETs · SOT-89
VBI2202K from VBsemi Elec, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS limited to ±20 V and threshold VGS(th) of -1.5 to -4.0 V. |
| 2 | D | passive | Drain, connected to the exposed tab; VDS rated -200 V and continuous ID of -2.5 A at TC = 25 °C. |
| 3 | S | passive | Source; body diode continuous current IS is -2 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -200 | V | TC = 25 °C, unless otherwise noted | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC = 25 °C, unless otherwise noted | 1 | |
| Continuous Drain Current | ID | -2.5 | A | VGS at -10 V, TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | -1.8 | A | VGS at -10 V, TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | -7 | A | Repetitive rating; pulse width limited by maximum junction temperature | 1 | ||
| Linear Derating Factor | 0.59 | W/°C | 1 | ||||
| Linear Derating Factor (PCB mount) | 0.025 | W/°C | 1 | ||||
| Single Pulse Avalanche Energy | EAS | 300 | mJ | 1 | |||
| Avalanche Current | IAR | -3.4 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 5.4 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 64 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation (PCB mount) | PD | 2.7 | W | TA = 25 °C | 1 | ||
| Peak Diode Recovery dV/dt | dV/dt | -5 | V/ns | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering Recommendations (Peak temperature) | 300 | °C | for 10 s | 1 | |||
| Maximum Junction-to-Ambient | RthJA | 62 | °C/W | 2 | |||
| Maximum Junction-to-Ambient (PCB mount) | RthJA | 40 | °C/W | PCB mount | 2 | ||
| Maximum Junction-to-Case (Drain) | RthJC | 1.7 | °C/W | 2 | |||
| Drain-Source Breakdown Voltage | VDS | -200 | V | VGS = 0, ID = -250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -1.5 | -4 | V | VDS = VGS, ID = -250 μA | 2 | |
| Gate-Source Leakage | IGSS | -10 | 10 | μA | VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 100 | μA | VDS = -200 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -500 | μA | VDS = -160 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Forward Transconductance | gfs | 2.8 | S | VDS = -50 V, ID = -1.0 A | 2 | ||
| Gate Input Resistance | Rg | 0.6 | 3.7 | Ω | f = 1 MHz, open drain | 2 | |
| Total Gate Charge | Qg | 29 | nC | VGS = -10 V, ID = -1.5 A, VDS = -160 V | 2 | ||
| Gate-Source Charge | Qgs | 5.4 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 15 | nC | 2 | |||
| Continuous Source-Drain Diode Current | IS | -2 | A | 2 | |||
| Pulsed Diode Forward Current | ISM | -4 | A | 2 | |||
| Body Diode Voltage | VSD | -6.5 | V | TJ = 25 °C, IS = -1.5 A, VGS = 0 V | 2 | ||
| Body Diode Reverse Recovery Time | trr | 200 | 300 | ns | TJ = 25 °C, IF = -3.5 A, dI/dt = 100 A/μs | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 1.9 | 2.9 | μC | 2 | ||
| VDS Temperature Coefficient | VDS/TJ | -0.24 | V/°C | Reference to 25 °C, ID = -1 mA | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 2 | Ω | VGS = -10 V, ID = -1.0 A | 2 | ||
| Input Capacitance | Ciss | 700 | pF | VGS = 0 V, VDS = -25 V, f = 1.0 MHz | 2 | ||
| Output Capacitance | Coss | 200 | pF | 2 | |||
| Reverse Transfer Capacitance | Crss | 40 | pF | 2 | |||
| Turn-On Delay Time | td(on) | 12 | ns | VDD = -100 V, ID = -1.5 A, Rg = 12, RD = 15 | 2 | ||
| Rise Time | tr | 27 | ns | 2 | |||
| Turn-Off Delay Time | td(off) | 28 | ns | 2 | |||
| Fall Time | tf | 24 | ns | 2 | |||
| Internal Drain Inductance | LD | 4.5 | nH | Between lead, 6 mm (0.25") from package and center of die contact | 2 | ||
| Internal Source Inductance | LS | 7.5 | nH | 2 |
CAD (KiCad official)
- Symbol:
VBI2202K - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
vbi2202k-etched.step/vbi2202k-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);vbi2202k.step/vbi2202k.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
bddb4e979290c2ce, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).