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CMD65R900Q
Public Made by Adomby adom
Cmos(广东场效应半导体) , TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCMD65R900Q
Cmos(广东场效应半导体) · IC · TO-252
CMD65R900Q from Cmos(广东场效应半导体), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the 650V super junction N-channel MOSFET; gate-source voltage is rated at ±30 V (VGS). |
| 2 | D | passive | Drain terminal; rated 650 V drain-source (VDS) with 5 A continuous drain current at TC=25℃. |
| 3 | S | passive | Source terminal; continuous source current is rated at 5 A (IS) and pulsed source current at 20 A (ISM). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | TO-252 |
| Category | |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±30V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VGS=VDS, ID=250uA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | μA | VDS=650V, VGS=0V | 2 | ||
| Continuous Source Current | IS | 5 | A | 2 | |||
| Pulsed Source Current | ISM | 20 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.4 | V | VGS=0V, IS=5A, TJ=25℃ | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 820 | 900 | mΩ | VGS=10V, ID=3A | 2 | |
| Drain-Source Voltage | VDS | 650 | V | 1 | |||
| Gate-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Continuous Drain Current | ID | 5 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | 3.2 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 20 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 183 | mJ | VDD=100V, VGS=10V, L=30mH, IAS=3.5A | 1 | ||
| Total Power Dissipation | PD | 35 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 62.5 | ℃/W | 1 | |||
| Thermal Resistance Junction-case | RθJC | 3.57 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
CMD65R900Q - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
cmd65r900q-etched.step/cmd65r900q-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmd65r900q.step/cmd65r900q.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos(广东场效应半导体) datasheet (6 pp, sha256
4b44f71f04a24239, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).