component
VBA1310S
Public Made by Adomby adom
VBsemi Elec MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownVBA1310S
VBsemi Elec · MOSFETs · SOIC-8
VBA1310S from VBsemi Elec, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S/A | passive | MOSFET source and Schottky anode, shared pin; the drain-source rating is 30 V. |
| 2 | S/A | passive | MOSFET source and Schottky anode, shared pin; the drain-source rating is 30 V. |
| 3 | S/A | passive | MOSFET source and Schottky anode, shared pin; the drain-source rating is 30 V. |
| 4 | G | input | MOSFET gate; gate-source voltage is rated at ±12 V. |
| 5 | D/K | passive | MOSFET drain and Schottky cathode, shared pin; the drain-source and Schottky reverse ratings are both 30 V. |
| 6 | D/K | passive | MOSFET drain and Schottky cathode, shared pin; the drain-source and Schottky reverse ratings are both 30 V. |
| 7 | D/K | passive | MOSFET drain and Schottky cathode, shared pin; the drain-source and Schottky reverse ratings are both 30 V. |
| 8 | D/K | passive | MOSFET drain and Schottky cathode, shared pin; the drain-source and Schottky reverse ratings are both 30 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOIC-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Schottky reverse voltage | VKA | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | 12 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | 10.4 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | 40 | A | 1 | |||
| Continuous Forward Current (Schottky) | IF | 4.4 | A | TA=25°C | 1 | ||
| Continuous Forward Current (Schottky) | IF | 3.2 | A | TA=70°C | 1 | ||
| Pulsed Diode Forward Current | IFM | 30 | A | 1 | |||
| Power Dissipation | PD | 3.1 | W | TA=25°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | ID=250µA, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current (Schottky leakage) | IDSS | 0.007 | mA | VR=30V | 3 | ||
| Zero Gate Voltage Drain Current (Schottky leakage) | IDSS | 3.2 | mA | VR=30V, TJ=125°C | 3 | ||
| Zero Gate Voltage Drain Current (Schottky leakage) | IDSS | 12 | mA | VR=30V, TJ=150°C | 3 | ||
| Gate-Body Leakage Current | IGSS | 100 | nA | VDS=0V, VGS=±12V | 3 | ||
| Gate Threshold Voltage | VGS(th) | 0.5 | 2 | V | VDS=VGS, ID=250µA | 3 | |
| On-State Drain Current | ID(ON) | 40 | A | 3 | |||
| Static Drain-Source On-Resistance | RDS(ON) | 8 | 9 | mΩ | VGS=10V, ID=13A | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 11 | mΩ | TJ=125°C | 3 | ||
| Forward Transconductance | gFS | 30 | 37 | S | VDS=5V, ID=13A | 3 | |
| Diode + Schottky Forward Voltage | VSD | 0.45 | 0.5 | V | IS=1A, VGS=0V | 3 | |
| Maximum Body-Diode + Schottky Continuous Current | IS | 5 | A | 3 | |||
| Gate Resistance | Rg | 0.86 | 1.1 | Ω | VGS=0V, VDS=0V, f=1MHz | 3 | |
| Total Gate Charge | Qg(4.5V) | 30.5 | 36 | nC | 3 | ||
| Turn-On Delay Time | tD(on) | 6.2 | 9 | ns | VGS=10V, VDS=15V, RL=1.1Ω, RGEN=0Ω | 3 | |
| Turn-On Rise Time | tr | 4.8 | 7 | ns | VGS=10V, VDS=15V, RL=1.1Ω, RGEN=0Ω | 3 | |
| Turn-Off Delay Time | tD(off) | 55 | 75 | ns | VGS=10V, VDS=15V, RL=1.1Ω, RGEN=0Ω | 3 | |
| Turn-Off Fall Time | tf | 7.3 | 11 | ns | VGS=10V, VDS=15V, RL=1.1Ω, RGEN=0Ω | 3 | |
| Body Diode+Schottky Reverse Recovery Time | trr | 20.3 | 25 | ns | IF=13A, dI/dt=100A/µs | 3 | |
| Body Diode+Schottky Reverse Recovery Charge | Qrr | 8.4 | 12.5 | nC | IF=13A, dI/dt=100A/µs | 3 | |
| Maximum Junction-to-Ambient (MOSFET), t ≤ 10s | RθJA | 28 | 40 | °C/W | t ≤ 10s | 2 | |
| Maximum Junction-to-Ambient (MOSFET), Steady-State | RθJA | 54 | 75 | °C/W | Steady-State | 2 | |
| Maximum Junction-to-Lead (MOSFET), Steady-State | RθJL | 21 | 30 | °C/W | Steady-State | 2 | |
| Maximum Junction-to-Ambient (Schottky), t ≤ 10s | RθJA | 36 | 40 | °C/W | t ≤ 10s | 2 | |
| Maximum Junction-to-Ambient (Schottky), Steady-State | RθJA | 67 | 75 | °C/W | Steady-State | 2 | |
| Maximum Junction-to-Lead (Schottky), Steady-State | RθJL | 25 | 30 | °C/W | Steady-State | 2 |
CAD (KiCad official)
- Symbol:
VBA1310S - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
vba1310s-etched.step/vba1310s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);vba1310s.step/vba1310s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
496befd7e26892b3, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).