component
VBA2305
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownVBA2305
VBsemi Elec · MOSFETs · SO-8
VBA2305 from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET (pins 1-3 are tied together); continuous source-drain diode current is -5 A at TC = 25 °C. |
| 2 | S | passive | Source terminal of the P-channel MOSFET (pins 1-3 are tied together); continuous source-drain diode current is -5 A at TC = 25 °C. |
| 3 | S | passive | Source terminal of the P-channel MOSFET (pins 1-3 are tied together); continuous source-drain diode current is -5 A at TC = 25 °C. |
| 4 | G | input | Gate terminal; gate-source voltage is rated ±20 V and the threshold voltage VGS(th) is -1 V to -2.2 V. |
| 5 | D | passive | Drain terminal (pins 5-8 are tied together); VDS is rated -30 V and continuous drain current is -18 A at TC = 25 °C. |
| 6 | D | passive | Drain terminal (pins 5-8 are tied together); VDS is rated -30 V and continuous drain current is -18 A at TC = 25 °C. |
| 7 | D | passive | Drain terminal (pins 5-8 are tied together); VDS is rated -30 V and continuous drain current is -18 A at TC = 25 °C. |
| 8 | D | passive | Drain terminal (pins 5-8 are tied together); VDS is rated -30 V and continuous drain current is -18 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | -30 | V | TA = 25 °C | 1 | ||
| Continuous drain current | ID | -18 | A | TC = 25 °C, TJ = 150 °C | 1 | ||
| Continuous drain current | ID | -13 | A | TC = 70 °C | 1 | ||
| Continuous drain current | ID | -11 | A | TA = 25 °C | 1 | ||
| Continuous drain current | ID | -8 | A | TA = 70 °C | 1 | ||
| Pulsed drain current | IDM | -145 | A | t = 100 μs | 1 | ||
| Continuous source-drain diode current | IS | -5 | A | TC = 25 °C | 1 | ||
| Continuous source-drain diode current | IS | -2.8 | A | TA = 25 °C | 1 | ||
| Single pulse avalanche current | IAS | -25 | A | L = 0.1 mH | 1 | ||
| Single pulse avalanche energy | EAS | 31.2 | mJ | L = 0.1 mH | 1 | ||
| Maximum power dissipation | PD | 5.6 | W | TC = 25 °C | 1 | ||
| Maximum power dissipation | PD | 3.6 | W | TC = 70 °C | 1 | ||
| Maximum power dissipation | PD | 3.1 | W | TA = 25 °C | 1 | ||
| Maximum power dissipation | PD | 2 | W | TA = 70 °C | 1 | ||
| Operating junction and storage temperature range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Junction-to-ambient thermal resistance | RthJA | 34 | 40 | °C/W | t ≤ 10 s | 1 | |
| Junction-to-case (drain) thermal resistance | RthJF | 18 | 22 | °C/W | Steady state | 1 | |
| Drain-source breakdown voltage | VDS | -30 | V | VGS = 0 V, ID = -250 μA | 2 | ||
| VDS temperature coefficient | ΔVDS/TJ | -17 | mV/°C | ID = -10 mA | 2 | ||
| VGS(th) temperature coefficient | ΔVGS(th)/TJ | 5.5 | mV/°C | ID = -250 μA | 2 | ||
| Gate-source threshold voltage | VGS(th) | -1 | -2.2 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-source leakage | IGSS | 100 | nA | VDS = 0 V, VGS = +16 / -20 V | 2 | ||
| Zero gate voltage drain current | IDSS | -1 | μA | VDS = -30 V, VGS = 0 V | 2 | ||
| Zero gate voltage drain current | IDSS | -15 | μA | VDS = -30 V, VGS = 0 V, TJ = 70 °C | 2 | ||
| On-state drain current | ID(on) | -40 | A | VDS ≤ -10 V, VGS = -10 V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.005 | Ω | VGS = -10 V, ID = -15 A | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.008 | Ω | VGS = -4.5 V, ID = -10 A | 2 | ||
| Forward transconductance | gfs | 81 | S | VDS = -15 V, ID = -15 A | 2 | ||
| Input capacitance | Ciss | 3490 | pF | VDS = -15 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Output capacitance | Coss | 1420 | pF | VDS = -15 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Reverse transfer capacitance | Crss | 70 | pF | VDS = -15 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Total gate charge | Qg | 56 | 84 | nC | VDS = -15 V, VGS = -10 V, ID = -10 A | 2 | |
| Total gate charge | Qg | 27 | 41 | nC | VDS = -15 V, VGS = -4.5 V, ID = -10 A | 2 | |
| Gate-source charge | Qgs | 9.4 | nC | VDS = -15 V, VGS = -4.5 V, ID = -10 A | 2 | ||
| Gate-drain charge | Qgd | 8.2 | nC | VDS = -15 V, VGS = -4.5 V, ID = -10 A | 2 | ||
| Gate resistance | Rg | 1.5 | 3.5 | 6 | Ω | f = 1 MHz | 2 |
| Turn-on delay time | td(on) | 15 | 30 | ns | VDD = -15 V, RL = 1.5 Ω, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Rise time | tr | 6 | 12 | ns | VDD = -15 V, RL = 1.5 Ω, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Turn-off delay time | td(off) | 39 | 78 | ns | VDD = -15 V, RL = 1.5 Ω, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Fall time | tf | 10 | 20 | ns | VDD = -15 V, RL = 1.5 Ω, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Turn-on delay time | td(on) | 34 | 68 | ns | VDD = -15 V, RL = 1.5 Ω, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Rise time | tr | 86 | 172 | ns | VDD = -15 V, RL = 1.5 Ω, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Turn-off delay time | td(off) | 31 | 62 | ns | VDD = -15 V, RL = 1.5 Ω, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Fall time | tf | 22 | 44 | ns | VDD = -15 V, RL = 1.5 Ω, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Continuous source-drain diode current | IS | -5 | A | TC = 25 °C | 2 | ||
| Pulse diode forward current | ISM | -150 | A | 2 | |||
| Body diode voltage | VSD | -0.73 | -1.1 | V | IS = -5 A, VGS = 0 V | 2 | |
| Body diode reverse recovery time | trr | 44 | 88 | ns | IF = -10 A, di/dt = 100 A/μs, TJ = 25 °C | 2 | |
| Body diode reverse recovery charge | Qrr | 41 | 82 | nC | IF = -10 A, di/dt = 100 A/μs, TJ = 25 °C | 2 | |
| Reverse recovery fall time | ta | 19 | ns | IF = -10 A, di/dt = 100 A/μs, TJ = 25 °C | 2 | ||
| Reverse recovery rise time | tb | 25 | ns | IF = -10 A, di/dt = 100 A/μs, TJ = 25 °C | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | d. The SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation | 1 |
CAD (KiCad official)
- Symbol:
VBA2305 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
vba2305-etched.step/vba2305-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);vba2305.step/vba2305.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
d1b66d6e640b8d8a, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).