component
WPM6207-3
Public Made by Adomby adom
WILLSEMI Will Semicon MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownWPM6207-3
WILLSEMI Will Semicon · MOSFETs · SOT-23-3
WPM6207-3 from WILLSEMI Will Semicon, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; VGS is limited to ±12V, with threshold VGS(TH) of -0.4V to -1V at ID=-250uA. |
| 2 | S | passive | Source of the P-channel MOSFET, connected to the body diode anode side; continuous drain current is -5.7A steady state at TA=25°C. |
| 3 | D | passive | Drain of the P-channel MOSFET; VDS is rated -20V with pulsed drain current IDM of -20A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WILLSEMI Will Semicon |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | BVDSS | -20 | V | VGS = 0 V, ID = -250uA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | uA | VDS = -16V, VGS = 0V | 3 | ||
| Gate-to-source Leakage Current | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±12V | 3 | |
| Gate Threshold Voltage | VGS(TH) | -0.4 | -0.65 | -1 | V | VGS = VDS, ID = -250uA | 3 |
| Drain-to-source On-resistance | RDS(on) | 25 | 32 | mΩ | VGS = -4.5V, ID = -5.7A | 3 | |
| Drain-to-source On-resistance | RDS(on) | 32 | 40 | mΩ | VGS = -2.5V, ID = -3.7A | 3 | |
| Drain-to-source On-resistance | RDS(on) | 42 | 60 | mΩ | VGS = -1.8V, ID = -2.0A | 3 | |
| Drain-Source Voltage | VDS | -20 | V | 2 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 2 | ||
| Continuous Drain Current (a, d) | ID | -6.4 | A | TA=25°C, t ≤ 10 s, surface mounted on FR-4 with 1 in² pad | 2 | ||
| Continuous Drain Current (a, d) | ID | -5.7 | A | TA=25°C, steady state, surface mounted on FR-4 with 1 in² pad | 2 | ||
| Continuous Drain Current (a, d) | ID | -5.1 | A | TA=70°C, t ≤ 10 s, surface mounted on FR-4 with 1 in² pad | 2 | ||
| Continuous Drain Current (a, d) | ID | -4.6 | A | TA=70°C, steady state, surface mounted on FR-4 with 1 in² pad | 2 | ||
| Continuous Drain Current (b, d) | ID | -5.5 | A | TA=25°C, t ≤ 10 s, minimum pad size | 2 | ||
| Continuous Drain Current (b, d) | ID | -4.8 | A | TA=25°C, steady state, minimum pad size | 2 | ||
| Continuous Drain Current (b, d) | ID | -4.4 | A | TA=70°C, t ≤ 10 s, minimum pad size | 2 | ||
| Continuous Drain Current (b, d) | ID | -3.9 | A | TA=70°C, steady state, minimum pad size | 2 | ||
| Maximum Power Dissipation (a, d) | PD | 1.5 | W | TA=25°C, t ≤ 10 s, surface mounted on FR-4 with 1 in² pad | 2 | ||
| Maximum Power Dissipation (a, d) | PD | 1.2 | W | TA=25°C, steady state, surface mounted on FR-4 with 1 in² pad | 2 | ||
| Maximum Power Dissipation (a, d) | PD | 1 | W | TA=70°C, t ≤ 10 s, surface mounted on FR-4 with 1 in² pad | 2 | ||
| Maximum Power Dissipation (a, d) | PD | 0.8 | W | TA=70°C, steady state, surface mounted on FR-4 with 1 in² pad | 2 | ||
| Maximum Power Dissipation (b, d) | PD | 1.1 | W | TA=25°C, t ≤ 10 s, minimum pad size | 2 | ||
| Maximum Power Dissipation (b, d) | PD | 0.8 | W | TA=25°C, steady state, minimum pad size | 2 | ||
| Maximum Power Dissipation (b, d) | PD | 0.7 | W | TA=70°C, t ≤ 10 s, minimum pad size | 2 | ||
| Maximum Power Dissipation (b, d) | PD | 0.5 | W | TA=70°C, steady state, minimum pad size | 2 | ||
| Pulsed Drain Current | IDM | -20 | A | Pulse width < 380 µs (c) | 2 | ||
| Operating Junction Temperature | TJ | -55 | 150 | °C | 2 | ||
| Lead Temperature | TL | 260 | °C | 2 | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 2 | ||
| Junction-to-Ambient Thermal Resistance (a) | RθJA | 65 | 80 | °C/W | t ≤ 10 s, surface mounted on FR-4 with 1 in² pad | 2 | |
| Junction-to-Ambient Thermal Resistance (a) | RθJA | 85 | 100 | °C/W | Steady state, surface mounted on FR-4 with 1 in² pad | 2 | |
| Junction-to-Ambient Thermal Resistance (b) | RθJA | 90 | 110 | °C/W | t ≤ 10 s, minimum pad size | 2 | |
| Junction-to-Ambient Thermal Resistance (b) | RθJA | 115 | 140 | °C/W | Steady state, minimum pad size | 2 | |
| Junction-to-Case Thermal Resistance | RθJC | 40 | 60 | °C/W | Steady state | 2 |
CAD (KiCad official)
- Symbol:
WPM6207-3 - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files:
wpm6207-3-etched.step/wpm6207-3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wpm6207-3.step/wpm6207-3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WILLSEMI Will Semicon datasheet (7 pp, sha256
e5eb94b80d775cf5, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).