component
MJD08N65
Public Made by Adomby adom
miracle MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMJD08N65
miracle · MOSFETs · TO-252
MJD08N65 from miracle, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal that controls switching, with absolute maximum gate-source voltage of ±30 V and gate leakage of ±100 nA max. |
| 2 | D | passive | Drain terminal (also the tab), rated for 650 V drain-source voltage and 8 A continuous current at TC = 25°C. |
| 3 | S | passive | Source terminal, the return for the 8 A continuous drain current and the body diode (IS 8 A max). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | miracle |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 650 | V | TJ=+25°C to +150°C (note a) | 1 | ||
| Gate-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Drain Current-Continuous | ID | 8 | A | TC=25°C | 1 | ||
| Drain Current-Pulsed | IDM | 24 | A | Repetitive rating; pulse width limited by maximum junction temperature (note b) | 1 | ||
| Maximum Power Dissipation | PD | 80 | W | TJ=25°C | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 15 | V/ns | 1 | |||
| Single Pulsed Avalanche Energy | EAS | 211 | mJ | L=10mH, VDD=50V, IAS=6.5A, RG=25Ω, starting TJ=25°C (note d) | 1 | ||
| Operating and Store Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS=0V, ID=250μA | 1 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=650V, VGS=0V | 1 | ||
| Forward Gate Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±30V | 1 | |
| Gate Threshold Voltage | VGS(th) | 2.8 | 4.2 | V | VDS=VGS, ID=250μA | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 0.5 | 0.55 | Ω | VGS=10V, ID=4.0A (pulse width ≤300μs, duty cycle ≤2%, note c) | 2 | |
| Drain-Source Diode Forward Continuous Current | IS | 8 | A | VGS=0V | 2 | ||
| Maximum Pulsed Current | ISM | 24 | A | VGS=0V | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 1.56 | °C/W | 1 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 62 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
MJD08N65 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
mjd08n65-etched.step/mjd08n65-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mjd08n65.step/mjd08n65.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: miracle datasheet (4 pp, sha256
1749021f8e493059, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).