component
BSS84LT1G-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBSS84LT1G-VB
VBsemi Elec · MOSFETs · SOT-23(TO-236)
BSS84LT1G-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; gate-source voltage is rated ±20 V (absolute maximum). |
| 2 | S | passive | Source of the P-channel MOSFET; the device is rated for a drain-source voltage of -60 V (VDS). |
| 3 | D | passive | Drain of the P-channel MOSFET; continuous drain current is -500 mA at TA = 25 °C (-350 mA at TA = 100 °C), with pulsed drain current up to -1500 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -500 | mA | TA = 25 °C | 1 | ||
| Continuous Drain Current | ID | -350 | mA | TA = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | -1500 | mA | 1 | |||
| Power Dissipation | PD | 460 | mW | TA = 25 °C, surface mounted on FR4 board (note a) | 1 | ||
| Power Dissipation | PD | 240 | mW | TA = 100 °C, surface mounted on FR4 board (note a) | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 350 | °C/W | Surface mounted on FR4 board (note a) | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Drain-Source Breakdown Voltage | VDS | -60 | V | VGS = 0 V, ID = - 10 µA | 2 | ||
| Gate-Threshold Voltage | VGS(th) | -3 | -1 | V | VDS = VGS, ID = - 250 µA | 2 | |
| Gate-Body Leakage | IGSS | -10 | 10 | µA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Gate-Body Leakage | IGSS | -200 | 200 | nA | VDS = 0 V, VGS = ± 10 V | 2 | |
| Gate-Body Leakage | IGSS | -500 | 500 | nA | VDS = 0 V, VGS = ± 10 V, TJ = 85 °C | 2 | |
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 5 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -25 | VDS = - 60 V, VGS = 0 V | 2 | |||
| Zero Gate Voltage Drain Current | IDSS | -250 | VDS = - 60 V, VGS = 0 V, TJ = 85 °C | 2 |
CAD (KiCad official)
- Symbol:
BSS84LT1G-VB - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files:
bss84lt1g-vb-etched.step/bss84lt1g-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bss84lt1g-vb.step/bss84lt1g-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
872d8263bc5a2acd, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).