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IRF640NPBF-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

Schematic Symbol

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Datasheet

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Contents

README

markdown

IRF640NPBF-HXY

HXY MOSFET · MOSFETs · TO-220

IRF640NPBF-HXY from HXY MOSFET, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the gate-source voltage is rated VGS ±20 V, and the threshold voltage VGS(th) is 2.0 to 4.0 V at VDS=VGS, ID=250μA.
2 D passive Drain terminal; the drain-source voltage is rated VDS 200 V and the drain current ID is rated 18 A at TC=25℃.
3 S passive Source terminal; it is the reference for the gate-source voltage rating VGS ±20 V and the drain-source breakdown voltage BVDSS of 200 V minimum at VGS=0V, ID=250μA.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-220
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 200 V 1
Gate-Source Voltage VGS 20 V 1
Drain Current ID 18 A TC=25℃ 1
Pulsed Drain Current IDM 72 A 1
Total Power Dissipation PD 125 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Drain-Source Breakdown Voltage BVDSS 200 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=200V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 2 4 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 120 145 mΩ VGS=10V, ID=9A 2
Forward Transconductance gFS 8 S VDS=40V,ID=5A 2
Diode Forward Current IS 18 A 2
Turn-on Delay Time td(on) 11 ns VDD=100V,ID=18A,RG=2.5Ω 2
Turn-on Rise Time tr 33 ns VDD=100V,ID=18A,RG=2.5Ω 2
Turn-Off Delay Time td(off) 25 ns VDD=100V,ID=18A,RG=2.5Ω 2
Total Gate Charge Qg 25 nC VDS=100V,ID=18A,VGS=10V 2
Gate-Source Charge Qgs 7.5 nC VDS=100V,ID=18A,VGS=10V 2
Gate-Drain Charge Qgd 9.5 nC VDS=100V,ID=18A,VGS=10V 2
Input Capacitance Ciss 1100 pF VDS=25V,VGS=0V,F=1.0MHz 2
Output Capacitance Coss 180 pF VDS=25V,VGS=0V,F=1.0MHz 2
Reverse Transfer Capacitance Crss 30 pF VDS=25V,VGS=0V,F=1.0MHz 2
Diode Forward Voltage VSD 1.4 V VGS=0V,IS=9A 2

CAD (KiCad official)

  • Symbol: IRF640NPBF-HXY
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: irf640npbf-hxy-etched.step / irf640npbf-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf640npbf-hxy.step / irf640npbf-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 e390773c4229ce42, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF