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AT45DB081E-SSHN-B

Public Made by Adom

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Adesto Technologies NOR FLASH, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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AT45DB081E-SSHN-B

Adesto Technologies · NOR FLASH · SOIC-8

AT45DB081E-SSHN-B from Adesto Technologies, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 SI input Serial Input: shifts in all command, address and data bits, latched on the rising edge of SCK and ignored while the device is deselected.
2 SCK input Serial Clock: controls data flow to and from the device, with input latched on the rising edge and output clocked out on the falling edge of SCK.
3 RESET input Active-low reset: a low level terminates the operation in progress and holds the internal state machine idle, and it should be driven high externally if unused.
4 CS input Active-low Chip Select: asserting it selects the device, and deasserting it deselects the device, normally entering standby, and puts SO in high impedance.
5 WP input Active-low Write Protect: protects the sectors set in the Sector Protection Register against program and erase, is internally pulled high and may be left floating if unused, though external connection to VCC is recommended.
6 VCC power_in Device power supply (1.7V to 3.6V); operation at invalid VCC voltages may produce spurious results and should not be attempted.
7 GND power_in Ground reference for the power supply, to be connected to system ground.
8 SO output Serial Output: shifts data out on the falling edge of SCK and is high-impedance whenever the device is deselected.

Key specifications

Parameter Value
Manufacturer Adesto Technologies
Package SOIC-8
Category Memory
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Temperature under bias -55 125 °C 46
Storage temperature -65 150 °C 46
All input voltages (except VCC, incl. NC pins) w.r.t. ground -0.6 0.6 V Upper limit printed as VCC + 0.6V (max shown is the offset above VCC) 46
All output voltages w.r.t. ground -0.6 0.6 V Upper limit printed as VCC + 0.6V (max shown is the offset above VCC) 46
Operating temperature (case), industrial -40 85 °C Industrial 46
VCC power supply VCC 1.7 3.6 V 46
Ultra-Deep Power-Down current IUDPD 0.4 1 µA CS= VCC. All other inputs at 0V or VCC 47
Deep Power-Down current IDPD 4.5 12 µA CS= VCC. All other inputs at 0V or VCC 47
Standby current ISB 25 40 µA CS= VCC. All other inputs at 0V or VCC 47
Active current, low power read (01h), 1MHz ICC1 6 9 mA f = 1MHz; IOUT = 0mA 47
Active current, low power read (01h), 15MHz ICC1 7 10 mA f = 15MHz; IOUT = 0mA 47
Active current, read, 50MHz ICC2 10 12 mA f = 50MHz; IOUT = 0mA 47
Active current, read, 85MHz ICC2 12 15 mA f = 85MHz; IOUT = 0mA 47
Active current, program operation ICC3 14 16 mA CS = VCC 47
Active current, erase operation ICC4 8 12 mA CS = VCC 47
Input load current ILI 1 µA All inputs at CMOS levels 47
Output leakage current ILO 1 µA All inputs at CMOS levels 47
Input low voltage VIL 0.3 VCC x 47
Input high voltage VIH 0.7 VCC x Max printed as VCC + 0.6 V 47
Output low voltage VOL 0.4 V IOL = 100µA 47
Output high voltage VOH 0.2 V IOH = -100µA; printed as VCC - 0.2V (value is the offset below VCC) 47
SCK frequency fSCK 85 MHz 48
SCK frequency for continuous read (0x03) (low frequency) fCAR2 50 MHz 48
SCK frequency for continuous read (low power mode, 01h opcode) fCAR3 20 MHz 48
SCK high time tWH 4 ns 48
SCK low time tWL 4 ns 48
SCK rise time, peak-to-peak tSCKR 0.1 V/ns 48
Minimum CS high time tCS 30 ns 48
CS setup time tCSS 6 ns 48
CS hold time tCSH 5 ns 48
Data in setup time tSU 2 ns 48
Data in hold time tH 1 ns 48
Output hold time tHO 0 ns 48
Output disable time tDIS 8 ns 48
Output valid tV 7 ns 48
WP low to protection enabled tWPE 1 µs 48
Freeze sector lockdown time (from CS high) tLOCK 200 µs 48
CS high to Ultra-Deep Power-Down tEUDPD 3 µs 48
Minimum CS low time to exit Ultra-Deep Power-Down tCSLU 20 ns 48
Exit Ultra-Deep Power-Down time tXUDPD 100 µs 48
Resume from Deep Power-Down time tRDPD 35 µs 48
Page to buffer transfer time tXFR 200 µs 48
Page to buffer compare time tCOMP 200 µs 48
RESET pulse width tRST 10 µs 48
RESET recovery time tREC 1 µs 48
Software reset time tSWRST 50 µs 48
Page erase and programming time (256/264 bytes) tEP 15 55 ms 49
Page programming time tP 2 4 ms 49
Byte programming time tBP 8 µs 49
Page erase time tPE 12 50 ms 49
Block erase time tBE 30 75 ms 49
Sector erase time tSE 0.7 1.3 s 49
Chip erase time tCE 10 20 s 49
Suspend time, program tSUSP 10 20 µs Program 49
Suspend time, erase tSUSP 20 40 µs Erase 49
Resume time, program tRES 3 5 µs Program 49
Resume time, erase tRES 3 5 µs Erase 49
OTP Security Register program time tOTPP 200 500 µs 49

CAD (KiCad official)

  • Symbol: AT45DB081E-SSHN-B
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: at45db081e-sshn-b-etched.step / at45db081e-sshn-b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); at45db081e-sshn-b.step / at45db081e-sshn-b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Adesto Technologies datasheet (70 pp, sha256 e216291379cff608, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF