component
LMBT2907ALT1G
Public Made by Adomby adom
LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownLMBT2907ALT1G
LRC · Bipolar (BJT) · SOT-23
LMBT2907ALT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | Base terminal of the PNP transistor; the datasheet gives the emitter-base breakdown voltage V(BR)EBO as -5.0 Vdc minimum at IE = -10 µA. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor; the absolute maximum emitter-base voltage VEBO is -5.0 Vdc. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor; the maximum continuous collector current IC is -600 mAdc and the collector-emitter voltage VCEO is -40 Vdc (2907) or -60 Vdc (2907A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector–Emitter Voltage | VCEO | -60 | Vdc | 1 | |||
| Collector–Base Voltage | VCBO | -60 | Vdc | 1 | |||
| Emitter–Base Voltage | VEBO | -5 | Vdc | 1 | |||
| Collector Current — Continuous | IC | -600 | mAdc | 1 | |||
| Total Device Dissipation (FR-5 Board) | PD | 225 | mW | FR-5 Board, TA = 25°C | 1 | ||
| Thermal Resistance, Junction to Ambient (FR-5 Board) | RθJA | 556 | °C/W | FR-5 Board | 1 | ||
| Total Device Dissipation (Alumina Substrate) | PD | 300 | mW | Alumina Substrate, TA = 25°C | 1 | ||
| Thermal Resistance, Junction to Ambient (Alumina Substrate) | RθJA | 417 | °C/W | Alumina Substrate | 1 | ||
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Collector–Base Breakdown Voltage | V(BR)CBO | -60 | Vdc | IC = –10 µAdc, IE = 0 | 2 | ||
| Collector–Emitter Breakdown Voltage (LMBT2907A) | V(BR)CEO | -60 | Vdc | IC = –10 mAdc, IB = 0 | 2 | ||
| Emitter–Base Breakdown Voltage | V(BR)EBO | -5 | Vdc | IE = –10 µAdc, IC = 0 | 2 | ||
| Collector Cutoff Current (ICEX) | ICEX | -50 | nAdc | VCB = –30 Vdc, IBE(OFF) = –0.5 Vdc | 2 | ||
| Collector Cutoff Current (LMBT2907A) | ICBO | -0.01 | µAdc | VCB = –50 Vdc, IE = 0 | 2 | ||
| Collector Cutoff Current (LMBT2907A, TA = 125°C) | ICBO | -10 | µAdc | VCB = –50 Vdc, IE = 0, TA = 125°C | 2 | ||
| Base Current | IB | -50 | nAdc | VCE = –30 Vdc, VEB(off) = –0.5 Vdc | 2 | ||
| DC Current Gain (LMBT2907A) | hFE | 75 | IC = –0.1 mAdc, VCE = –10 Vdc | 2 | |||
| DC Current Gain (LMBT2907A) | hFE | 100 | IC = –1.0 mAdc, VCE = –10 Vdc | 2 | |||
| DC Current Gain (LMBT2907A) | hFE | 100 | 300 | IC = –150 mAdc, VCE = –10 Vdc | 2 | ||
| DC Current Gain (LMBT2907A) | hFE | 50 | IC = –500 mAdc, VCE = –10 Vdc | 2 | |||
| Collector–Emitter Saturation Voltage | VCE(sat) | -0.4 | Vdc | IC = –150 mAdc, IB = –15 mAdc | 2 | ||
| Collector–Emitter Saturation Voltage | VCE(sat) | -1.6 | Vdc | IC = –500 mAdc, IB = –50 mAdc | 2 | ||
| Base–Emitter Saturation Voltage | VBE(sat) | -1.3 | Vdc | IC = –150 mAdc, IB = –15 mAdc | 2 | ||
| Base–Emitter Saturation Voltage | VBE(sat) | -2.6 | Vdc | IC = –500 mAdc, IB = –50 mAdc | 2 | ||
| Current–Gain — Bandwidth Product | fT | 200 | MHz | IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz | 3 | ||
| Output Capacitance | Cobo | 8 | pF | VCB = –10 Vdc, IE = 0, f = 1.0 MHz | 3 | ||
| Input Capacitance | Cibo | 30 | pF | VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz | 3 | ||
| Turn–On Time | ton | 45 | ns | VCC = –30 Vdc, IC = –150 mAdc, IB1 = –15 mAdc | 3 | ||
| Delay Time | td | 10 | ns | VCC = –30 Vdc, IC = –150 mAdc, IB1 = –15 mAdc | 3 | ||
| Rise Time | tr | 40 | ns | VCC = –30 Vdc, IC = –150 mAdc, IB1 = –15 mAdc | 3 | ||
| Fall Time | tf | 60 | ns | VCC = –6.0 Vdc, IC = –150 mAdc, IB1 = IB2 = 15 mAdc | 3 | ||
| Turn–Off Time | toff | 280 | ns | 3 |
CAD (KiCad official)
- Symbol:
LMBT2907ALT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
lmbt2907alt1g-etched.step/lmbt2907alt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lmbt2907alt1g.step/lmbt2907alt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LRC datasheet (7 pp, sha256
972edeefd64f88f2, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).